Patent Assignment
Reel/Frame 075871/0320
Nunc Pro Tunc Assignment
Recorded: 2026-07-01
Pages: 14
Assignor
SUMITOMO ELECTRIC INDUSTRIES, LTD.
Executed: 2026-06-15
Assignee
MITSUMI ELECTRIC CO., LTD.
2-11-2, TSURUMAKI, TAMA-SHI, TOKYO, 206-8567, JAPAN
Covered Properties
(152)
Silicon Carbide Semiconductor Device and Method of Manufacturing Thereof
Method for Manufacturing Silicon Carbide Semiconductor Device
Silicon Carbide Insulating Gate Type Semiconductor Device and Fabrication Method Thereof
Method of Manufacturing an Ohmic Electrode Containing Titanium, Aluminum and Silicon on a Silicon Carbide Surface
Silicon Carbide Semiconductor Device and Method for Manufacturing Same
Silicon Carbide Semiconductor Device
Silicon Carbide Insulated-Gate Bipolar Transistor
Silicon Carbide Semiconductor Device and Method for Manufacturing Same
Method of Manufacturing Silicon Carbide Semiconductor Device
Semiconductor Device and Fabrication Method Thereof
Semiconductor Device and Method for Manufacturing Same
Method for Manufacturing Semiconductor Device
Method of Manufacturing Semiconductor Device
Semiconductor Device and Method of Manufacturing the Same
Method for Manufacturing Semiconductor Device
Silicon Carbide Semiconductor Device and Method for Manufacturing Same
Semiconductor Device and Method for Manufacturing Semiconductor Device
Silicon Carbide Semiconductor Device and Method for Manufacturing Same
Method for Manufacturing Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device and Method for Manufacturing the Same
Semiconductor Device Having Angled Trench Walls
Semiconductor Device Having Deep and Shallow Trenches
Semiconductor Device and Method for Manufacturing Same
Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device and Method for Manufacturing Silicon Carbide Semiconductor Device
Semiconductor Device and Method for Manufacturing Same
Silicon Carbide Semiconductor Device and Method for Manufacturing the Same
Method for Manufacturing Semiconductor Device
Silicon Carbide Semiconductor Device and Method for Manufacturing Same
Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device and Method for Manufacturing Same
Method for Manufacturing Silicon Carbide Semiconductor Device
Method for Manufacturing Silicon Carbide Semiconductor Device
Semiconductor Device and Method for Manufacturing Semiconductor Device
Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device and Method for Manufacturing Same
Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device
Sic Semiconductor Element and Manufacturing Method Thereof
Silicon Carbide Epitaxial Substrate and Method of Manufacturing Silicon Carbide Epitaxial Substrate
Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device and Method for Manufacturing Same
Silicon Carbide Semiconductor Device and Method for Manufacturing Same
Silicon Carbide Semiconductor Device
Semiconductor Device
Silicon Carbide Semiconductor Device and Method of Manufacturing Same
Silicon Carbide Semiconductor Device and Method for Manufacturing Same
Silicon Carbide Semiconductor Device and Method for Manufacturing the Same
Silicon Carbide Semiconductor Device
Semiconductor Device and Fabrication Method Thereof
Silicon Carbide Semiconductor Device and Method for Manufacturing Same
Silicon Carbide Semiconductor Device
Method for Manufacturing Silicon Carbide Semiconductor Substrate
Silicon Carbide Semiconductor Device and Method for Manufacturing Same
Method of Manufacturing Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device
Method of Manufacturing Silicon Carbide Semiconductor Device
Method for Manufacturing Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device and Method for Manufacturing Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device and Method for Manufacturing Same
Silicon Carbide Semiconductor Device
Method of Manufacturing Silicon Carbide Semiconductor Device
Method for Manufacturing Silicon Carbide Semiconductor Device Having Trench
Method for Manufacturing Silicon Carbide Semiconductor Device and Silicon Carbide Semiconductor Device
Silicon Carbide Substrate, Silicon Carbide Semiconductor Device, and Methods for Manufacturing Silicon Carbide Substrate and Silicon Carbide Semiconductor Device
Semiconductor Device
Silicon Carbide Semiconductor Device
Method of Manufacturing Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device and Method for Manufacturing Same
Method for Manufacturing Silicon Carbide Semiconductor Device and Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device
Method for Manufacturing Silicon Carbide Semiconductor Device
Method for Manufacturing Silicon Carbide Semiconductor Device
Method for Manufacturing Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device and Method of Manufacturing the Same
Silicon Carbide Semiconductor Device and Method for Manufacturing the Same
Silicon Carbide Semiconductor Substrate, Method for Manufacturing Silicon Carbide Semiconductor Substrate, and Method for Manufacturing Silicon Carbide Semiconductor Device Where Depression Supression Layer Is Formed on Backside Surface of Base Substrate Opposite to Main Surface on Which Epitaxial Layer Is Formed
Silicon Carbide Semiconductor Substrate, Method for Manufacturing Silicon Carbide Semiconductor Substrate, and Method for Manufacturing Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device Having a Trench with Side Walls and Method for Manufacturing Same
Method for Manufacturing Semiconductor Device
Silicon Carbide Semiconductor Device and Method of Manufacturing the Same
Silicon Carbide Semiconductor Device and Method of Manufacturing the Same
Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device and Method of Manufacturing the Same
Semiconductor Device
Epitaxial Wafer and Method for Manufacturing Same
Silicon Carbide Semiconductor Device and Method for Manufacturing Same
Method for Manufacturing Silicon Carbide Epitaxial Substrate, and Silicon Carbide Epitaxial Substrate
Method of Manufacturing Silicon Carbide Semiconductor Substrate and Method of Manufacturing Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device and Method for Manufacturing Same
Silicon Carbide Semiconductor with Trench Gate
Silicon Carbide Epitaxial Substrate and Method of Manufacturing Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device and Method for Manufacturing the Same
Silicon Carbide Semiconductor Device and Method for Manufacturing Same
Method for Manufacturing Silicon Carbide Semiconductor Device and Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device
Method for Manufacturing Silicon Carbide Epitaxial Substrate, Silicon Carbide Epitaxial Substrate, Method for Manufacturing Silicon Carbide Semiconductor Device, and Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device and Method of Manufacturing the Same
Method of Manufacturing Silicon Carbide Epitaxial Substrate
Silicon Carbide Semiconductor Device and Method of Manufacturing the Same
Silicon Carbide Epitaxial Substrate and Method for Manufacturing Silicon Carbide Semiconductor Device
Method for Manufacturing Silicon Carbide Epitaxial Substrate, Method for Manufacturing Silicon Carbide Semiconductor Device, and Apparatus for Manufacturing Silicon Carbide Epitaxial Substrate
Silicon Carbide Epitaxial Substrate and Method of Manufacturing Silicon Carbide Semiconductor Device
Semiconductor Stack
Silicon Carbide Epitaxial Substrate Having a Silicon Carbide Layer and Method of Manufacturing Silicon Carbide Semiconductor Device
Silicon Carbide Single Crystal Substrate, Silicon Carbide Epitaxial Substrate, and Method of Manufacturing Silicon Carbide Semiconductor Device
Silicon Carbide Epitaxial Substrate and Method for Manufacturing Silicon Carbide Semiconductor Device
Method for Manufacturing Silicon Carbide Semiconductor Device and Silicon Carbide Semiconductor Device
Epitaxial Wafer and Method for Manufacturing Same
Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device
Silicon Carbide Epitaxial Substrate and Method for Manufacturing a Silicon Carbide Semiconductor Device
Silicon Carbide Epitaxial Substrate and Method for Manufacturing Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device
Silicon Carbide Single Crystal Substrate, Silicon Carbide Epitaxial Substrate, and Method of Manufacturing Silicon Carbide Semiconductor Device
Silicon Carbide Epitaxial Substrate and Method for Manufacturing Silicon Carbide Semiconductor Device
Silicon Carbide Epitaxial Substrate and Method for Manufacturing Silicon Carbide Semiconductor Device
Semiconductor Stack
Silicon Carbide Semiconductor Device
Silicon Carbide Epitaxial Wafer
Silicon Carbide Epitaxial Substrate Having Grooves Extending Along Main Surface and Method of Manufacturing Silicon Carbide Semiconductor Device
Semiconductor Stack
Insulated-Gate Transistor
Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device
Silicon Carbide Single Crystal Substrate, Silicon Carbide Epitaxial Substrate, and Method of Manufacturing Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device
Silicon Carbide Epitaxial Substrate Having Grooves Extending Along Main Surface and Method of Manufacturing Silicon Carbide Semiconductor Device
Silicon Carbide Epitaxial Substrate and Method of Manufacturing Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device
Silicon Carbide Semiconductor Device Including a Resin Covering a Silicon Carbide Semiconductor Chip
Silicon Carbide Epitaxial Substrate and Method for Manufacturing Silicon Carbide Semiconductor Device
Method for Manufacturing Silicon Carbide Epitaxial Substrate and Method for Manufacturing Silicon Carbide Semiconductor Device
Method for Manufacturing Silicon Carbide Epitaxial Substrate and Method for Manufacturing Silicon Carbide Semiconductor Device
Silicon Carbide Epitaxial Substrate
Silicon Carbide Epitaxial Substrate and Silicon Carbide Semiconductor Device
Method for Manufacturing Silicon Carbide Epitaxial Substrate
Silicon Carbide Epitaxial Substrate and Method for Manufacturing Silicon Carbide Semiconductor Device
Method for Producing Silicon Carbide Semiconductor Device and Silicon Carbide Semiconductor Device
Method for Manufacturing Silicon Carbide Semiconductor Device and Silicon Carbide Semiconductor Device
Semiconductor Device
Transistor and Semiconductor Device
Method of Manufacturing a Silicon Carbide Epitaxial Substrate
Silicon Carbide Epitaxial Substrate
Silicon Carbide Epitaxial Substrate
Related Assignments
(17)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
May 25, 2011
From: HONAGA, MISAKO; HARADA, SHIN
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 026337/0745 →
Assignment of Assignor's Interest
Dec 29, 2011
From: MASUDA, TAKEYOSHI; WADA, KEIJI; HONAGA, MISAKO
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 027460/0133 →
Assignment of Assignor's Interest
Jan 17, 2012
From: OOI, NAOKI; SHIOMI, HIROMU
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 027546/0349 →
Assignment of Assignor's Interest
Jan 25, 2012
From: TAMASO, HIDETO; WADA, KEIJI
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 027594/0979 →
Assignment of Assignor's Interest
Jan 31, 2012
From: TAMASO, HIDETO
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 027628/0123 →
Assignment of Assignor's Interest
Mar 29, 2012
From: MASUDA, TAKEYOSHI; HIYOSHI, TORU; WADA, KEIJI
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 027956/0577 →
Assignment of Assignor's Interest
Jun 5, 2012
From: YAMADA, SHUNSUKE; MASUDA, TAKEYOSHI
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 028322/0233 →
Assignment of Assignor's Interest
Jun 19, 2012
From: WADA, KEIJI; MASUDA, TAKEYOSHI; HONAGA, MISAKO; HIYOSHI, TORU
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 028403/0366 →
Assignment of Assignor's Interest
Jun 21, 2012
From: MASUDA, TAKEYOSHI; HARADA, SHIN; WADA, KEIJI; HIYOSHI, TORU
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 028421/0205 →
Assignment of Assignor's Interest
Jul 2, 2012
From: HAYASHI, HIDEKI
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 028477/0074 →
Assignment of Assignor's Interest
Jul 13, 2012
From: MASUDA, TAKEYOSHI; WADA, KEIJI; HIYOSHI, TORU
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 028547/0118 →
Assignment of Assignor's Interest
Aug 7, 2012
From: HONAGA, MISAKO; MASUDA, TAKEYOSHI; WADA, KEIJI; HIYOSHI, TORU
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 028742/0364 →
Assignment of Assignor's Interest
Aug 8, 2012
From: HIYOSHI, TORU; MASUDA, TAKEYOSHI
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 028751/0192 →
Assignment of Assignor's Interest
Aug 16, 2012
From: TAMASO, HIDETO
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 028799/0499 →
Assignment of Assignor's Interest
Aug 17, 2012
From: MASUDA, TAKEYOSHI
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 028807/0013 →
Assignment of Assignor's Interest
Sep 7, 2012
From: HIYOSHI, TORU; MASUDA, TAKEYOSHI; WADA, KEIJI
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 028920/0781 →
Assignment of Assignor's Interest
Sep 13, 2012
From: MASUDA, TAKEYOSHI; WADA, KEIJI; HIYOSHI, TORU
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 028956/0400 →