Silicon carbide semiconductor device and method for manufacturing same
When viewed in a plan view, a termination region (TM) surrounds an element region (CL). A first side of a silicon carbide substrate (SB) is thermally etched to form a side wall (ST) and a bottom surface (BT) in the silicon carbide substrate (SB) at the termination region (TM). The side wall (ST) has a plane orientation of one of {0-33-8} and {0-11-4}. The bottom surface (BT) has a plane orientation of {000-1}. On the side wall (ST) and the bottom surface (BT), an insulating film ( 8 T) is formed. A first electrode ( 12 ) is formed on the first side of the silicon carbide substrate (SB) at the element region (CL). A second electrode ( 14 ) is formed on a second side of the silicon carbide substrate (SB).
1. A method for manufacturing a silicon carbide semiconductor device having an element region provided with a semiconductor element and a termination region surrounding said element region when viewed in a plan view, comprising the steps of:
preparing a silicon carbide substrate that is made of silicon carbide having a hexagonal single-crystal structure and that has a first side and a second side opposite to each other in a thickness direction;
thermally etching said first side of said silicon carbide substrate so as to form a side wall and a bottom surface in said silicon carbide substrate at said termination region, said side wall surrounding said element region and having a plane orientation of one of {0-33-8} and {0-11-4}, said bottom surface surrounding a region including said element region and said side wall and having a plane orientation of {000-1};
forming an insulating film on said side wall and said bottom surface;
forming a first electrode on said first side of said silicon carbide substrate at said element region; and
forming a second electrode on said second side of said silicon carbide substrate.
2. The method for manufacturing the silicon carbide semiconductor device according to claim 1 , wherein the step of thermally etching includes the step of forming a channel surface in said silicon carbide substrate at said element region, said channel surface having a plane orientation of one of {0-33-8} and {0-11-4}.
3. The method for manufacturing the silicon carbide semiconductor device according to claim 2 , wherein the step of forming said channel surface is performed by forming a trench provided with an inner wall including said channel surface.
4. The method for manufacturing the silicon carbide semiconductor device according to claim 1 , wherein the step of thermally etching is performed using a process gas containing a halogen element.
5. The method for manufacturing the silicon carbide semiconductor device according to claim 4 , wherein said halogen element is chlorine.
6. The method for manufacturing the silicon carbide semiconductor device according to claim 4 , wherein said process gas contains at least one of carbon tetrafluoride and sulfur hexafluoride.
7. The method for manufacturing the silicon carbide semiconductor device according to claim 4 , wherein said process gas contains oxygen gas.
8. A silicon carbide semiconductor device having an element region provided with a semiconductor element and a termination region surrounding said element region when viewed in a plan view, comprising:
a silicon carbide substrate that is made of silicon carbide having a hexagonal single-crystal structure and that has a first side and a second side opposite to each other in a thickness direction, said first side of said silicon carbide substrate being provided with a side wall and a bottom surface in said termination region, said side wall surrounding said element region and having a plane orientation of one of {0-33-8} and {0-11-4}, said bottom surface surrounding said side wall and having a plane orientation of {000-1};
an insulating film provided on said side wall and said bottom surface;
a first electrode provided on said first side of said silicon carbide substrate at said element region; and
a second electrode provided on said second side of said silicon carbide substrate.
9. The silicon carbide semiconductor device according to claim 8 , wherein in said element region, said first side of said silicon carbide substrate is provided with a channel surface having a plane orientation of one of {0-33-8} and {0-11-4}.
10. The silicon carbide semiconductor device according to claim 9 , wherein said channel surface is a portion of an inner wall of a trench provided in said first side of said silicon carbide substrate at said element region.