Silicon carbide semiconductor device and method for manufacturing same
A drift layer has a thickness direction throughout which a current flows and has an impurity concentration N 1d for a first conductivity type. A body region is provided on a portion of the drift layer, has a channel to be switched by a gate electrode, has an impurity concentration N 1b for the first conductivity type, and has an impurity concentration N 2b for the second conductivity type greater than the impurity concentration N 1b . A JFET region is disposed adjacent to the body region on the drift layer, has an impurity concentration N 1j for the first conductivity type, and has an impurity concentration N 2j for the second conductivity type smaller than the impurity concentration N 1j . N 1j −N 2j >N 1d and N 2j <N 2b are satisfied.
1. A silicon carbide semiconductor device having a gate electrode for switching a current, comprising:
a drift layer having a thickness direction throughout which said current flows and having an impurity concentration N 1d for a first conductivity type;
a body region provided on a portion of said drift layer, having a channel to be switched by said gate electrode, having an impurity concentration N 1b for said first conductivity type, and having an impurity concentration N 2b for a second conductivity type greater than said impurity concentration N 1b ; and
a JFET region disposed adjacent to said body region on said drift layer, having an impurity concentration N 1j for said first conductivity type, and having an impurity concentration N 2j for said second conductivity type smaller than said impurity concentration N 1j , N 1j −N 2j >N 1d and N 2j <N 2b being satisfied.
2. The silicon carbide semiconductor device according to claim 1 , wherein N 1j −N 2j <N 2b −N 1b is satisfied.
3. The silicon carbide semiconductor device according to claim 1 , wherein N 1j =N 1b is satisfied.
4. The silicon carbide semiconductor device according to claim 1 , wherein N 1d =N 1b is satisfied.
5. A method for manufacturing a silicon carbide semiconductor device having a gate electrode for switching a current, comprising the steps of:
forming a drift layer having a thickness direction throughout which said current flows and having an impurity concentration N 1d for a first conductivity type;
forming a body region on a portion of said drift layer, said body region having a channel to be switched by said gate electrode, having an impurity concentration N 1b for said first conductivity type, and having an impurity concentration N 2b for a second conductivity type greater than said impurity concentration N 1b ; and
forming a JFET region adjacent to said body region on said drift layer, said JFET region having an impurity concentration N 1j for said first conductivity type and having an impurity concentration N 2j for said second conductivity type smaller than said impurity concentration N 1j , N 1j −N 2j >N 1d and N 2j <N 2b being satisfied.
6. The method for manufacturing the silicon carbide semiconductor device according to claim 5 , wherein the step of forming said JFET region includes the step of growing an epitaxial layer of said first conductivity type on said drift layer.
7. The method for manufacturing the silicon carbide semiconductor device according to claim 5 , wherein the step of forming said JFET region includes the step of implanting ions of an impurity of said first conductivity type into said drift layer.