Silicon carbide semiconductor device and method for manufacturing same
A silicon carbide film has first and second main surfaces. The second main surface has an element formation surface and a termination surface. The silicon carbide film has a first range that constitutes a first main surface and an intermediate surface opposite to the first main surface, and a second range that is provided on the intermediate surface and constitutes the element formation surface. The first range includes: a first breakdown voltage holding layer, and a guard ring region partially provided at the intermediate surface in the termination portion. The second range has a second breakdown voltage holding layer. The second range has one of a structure only having the second breakdown voltage holding layer in the termination portion and a structure disposed only in the element portion of the element portion and the termination portion.
1. A silicon carbide semiconductor device having an element portion provided with a semiconductor element and a termination portion surrounding said element portion, the silicon carbide semiconductor device comprising:
a silicon carbide film having a first main surface and a second main surface opposite to said first main surface, said second main surface having an element formation surface in said element portion and a termination surface in said termination portion, said silicon carbide film having a first range that constitutes said first main surface and an intermediate surface opposite to said first main surface, said silicon carbide film having a second range that is provided on said intermediate surface and constitutes said element formation surface, said first range including a first breakdown voltage holding layer having a first conductivity type, said first range including a guard ring region that is partially provided at said intermediate surface in said termination portion, that surrounds said element portion at said intermediate surface, and that has a second conductivity type, said second range having a second breakdown voltage holding layer having said first conductivity type, said second range having only said second breakdown voltage holding layer in said termination portion, or having no epitaxial film directly above said guard ring region in said termination portion;
a first main electrode facing said first main surface; and
a second main electrode facing said element formation surface of said second main surface,
wherein said first range includes a charge compensation region that is partially provided at said intermediate surface in said element portion and that has said second conductivity type, and
wherein a junction termination extension region is provided in the termination portion in contact with the charge compensation region in the element portion, the junction termination extension region having the same impurity concentration as the guard ring region.
2. The silicon carbide semiconductor device according to claim 1 , wherein said charge compensation region has an impurity concentration lower than an impurity concentration of said guard ring region.
3. The silicon carbide semiconductor device according to claim 1 , wherein said element formation surface and said termination surface are disposed on one flat plane.
4. The silicon carbide semiconductor device according to claim 1 , wherein said termination surface is closer to said first main surface than said element formation surface is.
5. The silicon carbide semiconductor device according to claim 4 , wherein said second range covers said guard ring region.
6. The silicon carbide semiconductor device according to claim 4 , wherein said guard ring region is located in said termination surface.
7. The silicon carbide semiconductor device according to claim 1 ,
wherein said first range includes a charge compensation region that is partially provided at said intermediate surface in said element portion, that has said second conductivity type, and that has an impurity concentration lower than an impurity concentration of said guard ring region, and
wherein said element formation surface and said termination surface are disposed on one flat plane.
8. The silicon carbide semiconductor device according to claim 1 ,
wherein said first range includes a charge compensation region that is partially provided at said intermediate surface in said element portion, that has said second conductivity type, and that has an impurity concentration lower than an impurity concentration of said guard ring region, and
wherein said termination surface is closer to said first main surface than said element formation surface is.
9. The silicon carbide semiconductor device according to claim 1 ,
wherein said first range includes a charge compensation region that is partially provided at said intermediate surface in said element portion, that has said second conductivity type, and that has an impurity concentration lower than an impurity concentration of said guard ring region,
wherein said termination surface is disposed to be shifted toward said first main surface from an imaginary plane including said element formation surface, and
wherein said second range covers said guard ring region.
10. The silicon carbide semiconductor device according to claim 1 ,
wherein said first range includes a charge compensation region that is partially provided at said intermediate surface in said element portion, that has said second conductivity type, and that has an impurity concentration lower than an impurity concentration of said guard ring region,
wherein said termination surface is closer to said first main surface than said element formation surface is, and
wherein said guard ring region is located in said termination surface.