Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device

1. A method for manufacturing a silicon carbide semiconductor device comprising:

preparing a silicon carbide layer including an n-type region having an n conductivity type and a p-type region having a p conductivity type;

forming a material layer containing titanium, aluminum, and silicon on the n-type region and the p-type region; and

forming an electrode layer in contact with the n-type region and the p-type region by heating the material layer,

the material layer having a thickness not smaller than 10 nm, and

the material layer having a composition of (Ti, Al, Si)=(x, y, z) (x, y, and z each being a numeric value greater than 0) in three-dimensional rectangular coordinates in which an X axis represents a ratio of the number of atoms of titanium, a Y axis represents a ratio of the number of atoms of aluminum, and a Z axis represents a ratio of the number of atoms of silicon, a point (x, y, z) being included in a first triangular pyramidal region, the first triangular pyramidal region having four points of an origin (0, 0, 0), a point (1, 2, 2), a point (2, 1, 2), and a point (2, 2, 1) as vertices.

2. The method for manufacturing a silicon carbide semiconductor device according to claim 1 , wherein

the forming a material layer includes stacking a titanium layer, an aluminum layer, and a silicon layer.

3. The method for manufacturing a silicon carbide semiconductor device according to claim 1 , wherein

the material layer has a thickness not smaller than 50 nm and not greater than 500 nm.

4. The method for manufacturing a silicon carbide semiconductor device according to claim 1 , wherein

in the forming an electrode layer, the material layer is heated to a temperature not lower than 800° C. and not higher than 1200° C.

5. The method for manufacturing a silicon carbide semiconductor device according to claim 1 , wherein

the point (x, y, z) is included in a second triangular pyramidal region having four points of the origin (0, 0, 0), a point (1, 1.5, 1.5), a point (1.5, 1, 1.5), and a point (1.5, 1.5, 1) as vertices.

6. A silicon carbide semiconductor device comprising:

a silicon carbide layer including an n-type region having an n conductivity type and a p-type region having a p conductivity type;

an electrode layer formed on the n-type region and the p-type region as being in contact with the n-type region and the p-type region; and

a coating layer formed on the electrode layer,

the electrode layer containing titanium, aluminum, silicon, and oxygen, and

aluminum and oxygen being present at an interface between the electrode layer and the coating layer, wherein

an atom concentration of carbon at an interface between the silicon carbide layer and the electrode layer is not higher than 10%.

7. The silicon carbide semiconductor device according to claim 6 , wherein

an atom concentration of aluminum in inside of the electrode layer is lower than an atom concentration of aluminum at the interface between the electrode layer and the coating layer.

8. The silicon carbide semiconductor device according to claim 6 , wherein

an atom concentration of oxygen in inside of the electrode layer is lower than an atom concentration of oxygen at the interface between the electrode layer and the coating layer.

9. The silicon carbide semiconductor device according to claim 6 , wherein

the coating layer is a barrier metal layer or a metal interconnection layer.

10. The silicon carbide semiconductor device according to claim 6 , wherein

an average value of a thickness of the electrode layer is not smaller than 50 nm and not greater than 500 nm.

11. The silicon carbide semiconductor device according to claim 10 , wherein

relation of (T max −T min )/T ave ≤1.0 is satisfied, where T max represents a maximum value of the thickness of the electrode layer, T min represents a minimum value of the thickness of the electrode layer, and T ave represents the average value.

12. The silicon carbide semiconductor device according to claim 6 , wherein

an average value of an atom concentration of carbon in inside of the electrode layer is not higher than 10%.

13. A silicon carbide semiconductor device comprising:

a silicon carbide layer including an n-type region having an n conductivity type and a p-type region having a p conductivity type;

an electrode layer formed on the n-type region and the p-type region as being in contact with the n-type region and the p-type region; and

a coating layer formed on the electrode layer,

the electrode layer containing titanium, aluminum, silicon, and oxygen, and

aluminum and oxygen being present at an interface between the electrode layer and the coating layer, wherein

an atom concentration of aluminum in inside of the electrode layer is lower than an atom concentration of aluminum at the interface between the electrode layer and the coating layer,

an atom concentration of oxygen in inside of the electrode layer is lower than an atom concentration of oxygen at the interface between the electrode layer and the coating layer,

the coating layer is a barrier metal layer or a metal interconnection layer,

an average value of a thickness of the electrode layer is not smaller than 50 nm and not greater than 500 nm,

relation of (T max −T min )/T ave ≤1.0 is satisfied, where T max represents a maximum value of the thickness of the electrode layer, T min represents a minimum value of the thickness of the electrode layer, and T ave represents the average value,

an atom concentration of carbon at an interface between the silicon carbide layer and the electrode layer is not higher than 10%, and

an average value of an atom concentration of carbon in inside of the electrode layer is not higher than 10%.