Silicon carbide single crystal substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device
A silicon carbide single crystal substrate includes a first main surface and an orientation flat. The orientation flat extends in a <11-20> direction. The first main surface includes an end region extending by at most 5 mm from an outer periphery of the first main surface. In a direction perpendicular to the first main surface, an amount of warpage of the end region continuous to the orientation flat is not greater than 3 μm.
1. A silicon carbide single crystal substrate comprising:
a first main surface; and
an orientation flat extending in a <11-20> direction,
the first main surface including an end region extending by at most 5 mm from an outer periphery of the first main surface, and
in a direction perpendicular to the first main surface, an amount of warpage of the end region continuous to the orientation flat being not greater than 3 μm.
2. The silicon carbide single crystal substrate according to claim 1 , wherein
when a cross-section which divides the orientation flat perpendicularly into two equal sections when viewed in the direction perpendicular to the first main surface is viewed, toward the orientation flat, the end region is warped upward in a direction away from a surface opposite to the first main surface, and
the amount of warpage represents a distance between a point of contact between the orientation flat and the first main surface and a point where a least square line calculated from a cross-sectional profile of the first main surface in a region extending from a position distant by 3 mm from the orientation flat toward a center of the first main surface to a position distant by 5 mm from the orientation flat intersects with the orientation flat.
3. The silicon carbide single crystal substrate according to claim 1 , wherein
when a cross-section which divides the orientation flat perpendicularly into two equal sections when viewed in the direction perpendicular to the first main surface is viewed, toward the orientation flat, the end region is warped downward in a direction toward a surface opposite to the first main surface, and
the amount of warpage represents a distance between a point of contact between the orientation flat and the first main surface and a point where a least square line calculated from a cross-sectional profile of the first main surface in a region extending from a position distant by 3 mm from the orientation flat toward a center of the first main surface to a position distant by 5 mm from the orientation flat intersects with a virtual plane extending along the orientation flat.
4. The silicon carbide single crystal substrate according to claim 1 , wherein
the amount of warpage is not greater than 2 μm.
5. The silicon carbide single crystal substrate according to claim 4 , wherein
the amount of warpage is not greater than 1 μm.
6. A silicon carbide epitaxial substrate comprising:
the silicon carbide single crystal substrate according to claim 1 ; and
a silicon carbide layer on the first main surface,
the silicon carbide layer including a second main surface opposite to a surface in contact with the first main surface, and
the second main surface being free from a stacking fault extending in a <1-100> direction from the orientation flat and having a length not shorter than 1 mm.
7. A method of manufacturing a silicon carbide semiconductor device comprising:
preparing the silicon carbide epitaxial substrate according to claim 6 ; and
processing the silicon carbide epitaxial substrate.
8. The silicon carbide single crystal substrate according to claim 1 , wherein
when a line segment which divides the orientation flat perpendicularly into two equal sections is divided into four equal sections when viewed in the direction perpendicular to the first main surface, the first main surface includes a lower region extending from the orientation flat to a position corresponding to ¼ of the line segment, and
the amount of warpage of the end region continuous to an end portion of the lower region is not greater than 3 μm.
9. A silicon carbide epitaxial substrate comprising:
the silicon carbide single crystal substrate according to claim 8 ; and
a silicon carbide layer on the first main surface,
the silicon carbide layer including a second main surface opposite to a surface in contact with the first main surface, and
the second main surface being free from a stacking fault extending in a <1-100> direction from the end portion of the lower region and having a length not shorter than 1 mm.
10. The silicon carbide single crystal substrate according to claim 1 , wherein
when a line segment which divides the orientation flat perpendicularly into two equal sections is divided into four equal sections when viewed in the direction perpendicular to the first main surface, the first main surface includes an upper region extending from an end portion opposite to the orientation flat to a position corresponding to ¼ of the line segment, and
the amount of warpage of the end region continuous to the end portion of the upper region is not greater than 3 μm.
11. A silicon carbide epitaxial substrate comprising:
the silicon carbide single crystal substrate according to claim 10 ; and
a silicon carbide layer on the first main surface,
the silicon carbide layer including a second main surface opposite to a surface in contact with the first main surface, and
the second main surface being free from a stacking fault extending in a <1-100> direction from the end portion of the upper region and having a length not shorter than 1 mm.
12. The silicon carbide single crystal substrate according to claim 1 , wherein
when a line segment which divides the orientation flat perpendicularly into two equal sections is divided into four equal sections when viewed in the direction perpendicular to the first main surface, the first main surface includes a lower region extending from the orientation flat to a position corresponding to ¼ of the line segment and an upper region extending from an end portion opposite to the orientation flat to a position corresponding to ¼ of the line segment, and
the amount of warpage of the end region continuous to an end portion of the lower region is not greater than 3 μm and the amount of warpage of the end region continuous to the end portion of the upper region is not greater than 3 μm.
13. A silicon carbide epitaxial substrate comprising:
the silicon carbide single crystal substrate according to claim 12 ; and
a silicon carbide layer on the first main surface,
the silicon carbide layer including a second main surface opposite to a surface in contact with the first main surface, and
the second main surface being free from a stacking fault extending in a <1-100> direction from the end portion of the lower region and having a length not shorter than 1 mm and from a stacking fault extending in the <1-100> direction from the end portion of the upper region and having a length not shorter than 1 mm.