Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device
The composite defect includes an extended defect and a basal plane dislocation. The extended defect includes a first region extending in a <11−20> direction from an origin located at a boundary between the silicon carbide substrate and the silicon carbide epitaxial film, and a second region extending along a <1−100> direction. The first region has a width in the <1−100> direction that increases from the origin toward the second region. The basal plane dislocation includes a third region continuous to the origin and extending along the <1−100> direction, and a fourth region extending along a direction intersecting the <1−100> direction. When an area of the main surface is a first area, and an area of a quadrangle circumscribed around the composite defect is a second area, a value obtained by dividing the second area by the first area is not more than 0.001.
1. A silicon carbide epitaxial substrate comprising:
a silicon carbide substrate;
a silicon carbide epitaxial film on the silicon carbide substrate; and
a composite defect in the silicon carbide epitaxial film,
a main surface of the silicon carbide epitaxial film being a surface inclined at an off angle of not less than 2° and not more than 6° relative to a {0001} plane,
the composite defect including an extended defect and a basal plane dislocation,
the extended defect including a first region extending in a <11−20> direction from an origin located at a boundary between the silicon carbide substrate and the silicon carbide epitaxial film, and a second region extending along a <1−100> direction,
the first region having a width in the <1−100> direction that increases from the origin toward the second region,
the extended defect being made of silicon carbide having a polytype different from a polytype of silicon carbide forming the silicon carbide epitaxial film,
the basal plane dislocation including a third region continuous to the origin and extending along the <1−100> direction, and a fourth region extending along a direction intersecting the <1−100> direction,
when viewed in a direction perpendicular to the main surface, an end portion of the fourth region being located on a straight line along the second region, and
when an area of the main surface is a first area, and an area of a quadrangle circumscribed around the composite defect is a second area, a value obtained by dividing the second area by the first area being not more than 0.001.
2. The silicon carbide epitaxial substrate according to claim 1 , wherein
the silicon carbide epitaxial film has a thickness of not less than 15 μm.
3. The silicon carbide epitaxial substrate according to claim 1 , wherein
there are silicon carbide particles at the origin.
4. The silicon carbide epitaxial substrate according to claim 1 , wherein
there are carbon particles at the origin.
5. The silicon carbide epitaxial substrate according to claim 1 , wherein
the composite defect is located within a circle centered at a center of the main surface and having a radius which is two-thirds a radius of the main surface.
6. A method of manufacturing a silicon carbide semiconductor device, comprising:
preparing the silicon carbide epitaxial substrate according to claim 1 ; and
processing the silicon carbide epitaxial substrate.