Method for manufacturing silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and apparatus for manufacturing silicon carbide epitaxial substrate
In forming of a silicon carbide layer, when an X axis indicates a first value representing, in percentage, a value obtained by dividing a flow rate of silane by a flow rate of hydrogen and a Y axis indicates a second value representing a flow rate of ammonia in sccm, the first value and the second value fall within a quadrangular region surrounded by first coordinates, second coordinates, third coordinates, and fourth coordinates in XY plane coordinates. The first coordinates are (0.05, 6.5×10 −4 ). The second coordinates are (0.05, 4.5×10 −3 ). The third coordinates are (0.22, 1.2×10 −2 ). The fourth coordinates are (0.22, 1.3×10 −1 ). After the forming of the silicon carbide layer, an average value of carrier concentration of the silicon carbide layer is more than or equal to 1×10 15 cm −3 and less than or equal to 2×10 16 cm −3 .
1. A method for manufacturing a silicon carbide epitaxial substrate, the method comprising:
placing a silicon carbide single crystal substrate in a reaction chamber; and
forming a silicon carbide layer on the silicon carbide single crystal substrate by supplying the reaction chamber with a mixed gas including silane, ammonia, hydrogen, and a gas including carbon atoms,
the silicon carbide single crystal substrate having a maximum diameter of more than or equal to 100 mm,
in the forming of the silicon carbide layer, when an X axis indicates a first value representing, in percentage, a value obtained by dividing a flow rate of the silane by a flow rate of the hydrogen and a Y axis indicates a second value representing a flow rate of the ammonia in sccm, the first value and the second value falling within a quadrangular region surrounded by first coordinates, second coordinates, third coordinates, and fourth coordinates in XY plane coordinates,
the first coordinates being (0.05, 6.5×10 −4 ),
the second coordinates being (0.05, 4.5×10 −3 ),
the third coordinates being (0.22, 1.2×10 −2 ),
the fourth coordinates being (0.22, 1.3×10 −1 ),
after the forming of the silicon carbide layer, an average value of carrier concentration of the silicon carbide layer being more than or equal to 1×10 15 cm −3 and less than or equal to 2×10 16 cm −3 .
2. The method for manufacturing the silicon carbide epitaxial substrate according to claim 1 , wherein
the reaction chamber includes a first heating region above the silicon carbide
single crystal substrate and a second heating region located upstream of the first heating region, and
in the forming of the silicon carbide layer, the second heating region has a temperature more than or equal to a decomposition temperature of the ammonia.
3. The method for manufacturing the silicon carbide epitaxial substrate according to claim 2 , wherein the second heating region has a length of more than or equal to 60 mm in a flow direction of the mixed gas.
4. A method for manufacturing a silicon carbide semiconductor device, the method comprising:
preparing the silicon carbide epitaxial substrate manufactured by the method recited in claim 1 ; and
processing the silicon carbide epitaxial substrate.