Silicon carbide semiconductor device and method of manufacturing thereof
A silicon carbide semiconductor device is provided that includes a semiconductor layer made of silicon carbide and having a surface with a trench having a sidewall formed of a crystal plane tilted at an angle in a range of not less than 50° and not more than 65° relative to the {0001} plane, and an insulating film formed to contact the sidewall of the trench. A maximum value of the nitrogen concentration in a region within 10 nm from the interface between the sidewall of the trench and the insulating film is not less than 1×10 21 cm −3 , and the semiconductor device has a channel direction in a range of ±10° relative to the direction orthogonal to the <−2110> direction in the sidewall of the trench. A method of manufacturing the silicon carbide semiconductor device is also provided.
1. A silicon carbide semiconductor device comprising:
a semiconductor layer made of silicon carbide and having a surface with a trench having a sidewall formed of a crystal plane tilted at an angle in a range of not less than 50° and not more than 65° relative to a {0001} plane; and
an insulating film formed to contact said sidewall of said trench,
a region within 10 nm from an interface between said sidewall of said trench and said insulating film comprises a maximum value of a nitrogen concentration of not less than 1×10 21 cm −3 , and
said silicon carbide semiconductor device having a channel direction in a range of ±10° relative to a direction orthogonal to a <−2110> direction in said sidewall of said trench.
2. A silicon carbide semiconductor device comprising:
a substrate made of silicon carbide of a first conductive type;
a semiconductor layer made of silicon carbide of the first conductive type, formed on said substrate, containing a first-conductive-type impurity of a lower concentration than said substrate, and having a surface with a trench having a sidewall formed of a crystal plane tilted at an angle in a range of not less than 50° and not more than 65° relative to a {0001} plane;
a second-conductive-type impurity diffusion layer formed in said sidewall of said trench;
a first-conductive-type impurity diffusion layer formed in the surface of said semiconductor layer;
an insulating film formed to contact said sidewall of said trench;
a source electrode formed to contact at least a part of a region, except for a portion where said insulating film is formed, of said surface of said semiconductor layer;
a gate electrode formed on said insulating film; and
a drain electrode formed on a surface of said substrate opposite to a surface of said substrate on which said semiconductor layer is formed,
a region within 10 nm from an interface between said sidewall of said trench and said insulating film comprises a maximum value of a nitrogen concentration of not less than 1×10 21 cm −3 , and
said silicon carbide semiconductor device having a channel direction in a range of ±10° relative to a direction orthogonal to a <−2110> direction in said sidewall of said trench.
3. The silicon carbide semiconductor device according to claim 2 , wherein said source electrode has a surface in a stripe pattern.
4. The silicon carbide semiconductor device according to claim 2 , wherein said source electrode has a surface in a honeycomb pattern.
5. The silicon carbide semiconductor device according to claim 1 , wherein said sidewall of said trench is formed of a crystal plane tilted at an angle of ±5° relative to a {03-38} plane.
6. A method of manufacturing a silicon carbide semiconductor device, comprising the steps of:
forming a trench having a sidewall formed of a crystal plane tilted at an angle in a range of not less than 50° and not more than 65° relative to a {0001} plane, in a surface of a semiconductor layer made of silicon carbide;
forming an insulating film contacting said sidewall of said trench so that a channel direction is set in a range of ±10° relative to a direction orthogonal to a <−2110> direction in said sidewall of said trench; and
adjusting a nitrogen concentration so that a region within 10 nm from an interface between said sidewall of said trench and said insulating film comprises a maximum value of a nitrogen concentration of not less than 1×10 21 cm −3 .
7. The method of manufacturing a silicon carbide semiconductor device according to claim 6 , wherein the channel direction is set in a range of ±10° relative to the direction orthogonal to the <−2110> direction in said sidewall of said trench, based on an orientation of a defect included in said semiconductor layer.
8. The method of manufacturing a silicon carbide semiconductor device according to claim 6 , wherein said step of adjusting the nitrogen concentration includes the step of performing a heat treatment in an atmosphere of a gas containing nitrogen, on said semiconductor layer where said insulating film is formed.
9. The method of manufacturing a silicon carbide semiconductor device according to claim 8 , wherein said step of adjusting the nitrogen concentration includes the step of performing, on said semiconductor layer having undergone said heat treatment, a heat treatment in an atmosphere of an inert gas.