Method for manufacturing silicon carbide epitaxial substrate

1. A method for manufacturing a silicon carbide epitaxial substrate, the method comprising:

forming a first silicon carbide layer on a first silicon carbide substrate by epitaxial growth, using a first ammonia gas as a dopant gas;

measuring a thickness of the first silicon carbide layer and a carrier concentration of the first silicon carbide layer;

calculating formation conditions for a second silicon carbide layer; and

forming the second silicon carbide layer on a second silicon carbide substrate by epitaxial growth, using a second ammonia gas as a dopant gas, wherein

when a flow rate of the first ammonia gas in the forming of the first silicon carbide layer by epitaxial growth is defined as a first flow rate, a formation time of the first silicon carbide layer in the forming of the first silicon carbide layer by epitaxial growth is defined as a first formation time, the thickness of the first silicon carbide layer is defined as a first thickness, the carrier concentration of the first silicon carbide layer is defined as a first concentration, a target thickness of the second silicon carbide layer is defined as a second thickness, and a target carrier concentration of the second silicon carbide layer is defined as a second concentration,

in the calculating of the formation conditions for the second silicon carbide layer, a second formation time of the second silicon carbide layer is calculated as a value obtained by multiplying a value obtained by dividing the second thickness by the first thickness, by the first formation time, and a second flow rate of the second ammonia gas in the forming of the second silicon carbide layer by epitaxial growth is calculated as a value obtained by multiplying a value obtained by dividing the second concentration by the first concentration, by the first flow rate,

in the forming of the second silicon carbide layer by epitaxial growth, the second silicon carbide layer is formed using the second formation time and the second flow rate, and

the forming of the first silicon carbide layer by epitaxial growth and the forming of the second silicon carbide layer by epitaxial growth are performed using an identical apparatus.

2. The method for manufacturing the silicon carbide epitaxial substrate according to claim 1 , wherein the value obtained by dividing the second concentration by the first concentration is more than or equal to 0.1 and less than or equal to 5.

3. The method for manufacturing the silicon carbide epitaxial substrate according to claim 1 , wherein a value obtained by dividing the first thickness by the first formation time is more than or equal to 5 μm/hour and less than or equal to 30 μm/hour.

4. The method for manufacturing the silicon carbide epitaxial substrate according to claim 1 , wherein, when a carrier concentration of the first silicon carbide substrate is defined as a first substrate concentration, the first concentration is lower than half of the first substrate concentration.

5. The method for manufacturing the silicon carbide epitaxial substrate according to claim 1 , comprising:

forming a third silicon carbide layer on a third silicon carbide substrate by epitaxial growth, using a third ammonia gas as a dopant gas;

measuring a thickness of the third silicon carbide layer and a carrier concentration of the third silicon carbide layer;

calculating formation conditions for a fourth silicon carbide layer; and

forming the fourth silicon carbide layer on the second silicon carbide substrate by epitaxial growth, using a fourth ammonia gas as a dopant gas, before the forming of the second silicon carbide layer by epitaxial growth, wherein

the second silicon carbide layer is formed on the fourth silicon carbide layer,

when a flow rate of the third ammonia gas in the forming of the third silicon carbide layer by epitaxial growth is defined as a third flow rate, a formation time of the third silicon carbide layer in the forming of the third silicon carbide layer by epitaxial growth is defined as a third formation time, the thickness of the third silicon carbide layer is defined as a third thickness, the carrier concentration of the third silicon carbide layer is defined as a third concentration, a target thickness of the fourth silicon carbide layer is defined as a fourth thickness, and a target carrier concentration of the fourth silicon carbide layer is defined as a fourth concentration,

in the calculating of the formation conditions for the fourth silicon carbide layer, a fourth formation time of the fourth silicon carbide layer is calculated as a value obtained by multiplying a value obtained by dividing the fourth thickness by the third thickness, by the third formation time, and a fourth flow rate of the fourth ammonia gas in the forming of the fourth silicon carbide layer by epitaxial growth is calculated as a value obtained by multiplying a value obtained by dividing the fourth concentration by the third concentration, by the third flow rate,

in the forming of the fourth silicon carbide layer by epitaxial growth, the fourth silicon carbide layer is formed using the fourth formation time and the fourth flow rate, and

the forming of the third silicon carbide layer by epitaxial growth and the forming of the fourth silicon carbide layer by epitaxial growth are performed using an identical apparatus.

6. The method for manufacturing the silicon carbide epitaxial substrate according to claim 5 , wherein the value obtained by dividing the fourth concentration by the third concentration is more than or equal to 0.1 and less than or equal to 5.

7. The method for manufacturing the silicon carbide epitaxial substrate according to claim 5 or 6 , wherein a value obtained by dividing the third thickness by the third formation time is more than or equal to 5 μm/hour and less than or equal to 30 μm/hour.

8. The method for manufacturing the silicon carbide epitaxial substrate according to claim 5 , wherein, when a carrier concentration of the third silicon carbide substrate is defined as a third substrate concentration, the third concentration is lower than half of the third substrate concentration.