Semiconductor device having deep and shallow trenches
A MOSFET includes: a substrate made of silicon carbide and having a first trench and a second trench formed therein, the first trench having an opening at the main surface side, the second trench having an opening at the main surface side and being shallower than the first trench; a gate insulating film; a gate electrode; and a source electrode disposed on and in contact with a wall surface of the second trench. The substrate includes a source region, a body region, and a drift region. The first trench is formed to extend through the source region and the body region and reach the drift region. The second trench is formed to extend through the source region and reach the body region.
1. A semiconductor device comprising:
a substrate made of silicon carbide and having a first trench and a second trench formed therein, said first trench having an opening at a side of one main surface, said second trench having an opening at the side of said main surface and being shallower than said first trench;
a gate insulating film disposed on and in contact with a wall surface of said first trench;
a gate electrode disposed on and in contact with said gate insulating film; and
a contact electrode disposed on and in contact with a wall surface of said second trench,
said substrate including
a source region including said main surface of said substrate and said wall surface of said first trench,
a body region making contact with said source region and including said wall surface of said first trench, and
a drift region making contact with said body region and including said wall surface of said first trench,
said first trench being formed to extend through said source region and said body region and reach said drift region,
said second trench being formed to extend through said source region and reach said body region.
2. The semiconductor device according to claim 1 , wherein said contact electrode is disposed not to be on and in contact with said main surface of said substrate.
3. The semiconductor device according to claim 1 , wherein said wall surface of said second trench is constituted of a plane crossing a {0001} plane.
4. The semiconductor device according to claim 1 , wherein in a cross section in a thickness direction of said substrate including said first and second trenches, a fictitious straight line (A-A) extending from said wall surface at a lowermost portion of said second trench in parallel with a {0001} plane crosses said wall surface of said first trench facing said second trench.
5. The semiconductor device according to claim 4 , wherein in the cross section in the thickness direction of said substrate including said first and second trenches, said fictitious straight line (A-A) crosses said wall surface of said first trench facing said second trench, without crossing said drift region.
6. The semiconductor device according to claim 1 , wherein said main surface of said substrate is constituted of a plane having an off angle of 8° or smaller relative to a {0001} plane.
7. The semiconductor device according to claim 1 , wherein said wall surface of said first trench forms an obtuse angle relative to said main surface of said substrate.
8. The semiconductor device according to claim 1 , wherein said wall surface of said first trench is constituted of a plane having an off angle of not less than 50° and not more than 65° relative to a {0001} plane.
9. The semiconductor device according to claim 1 , wherein said body region has an impurity concentration of not less than 1.0×10 17 cm −3 and not more than 5.0×10 18 cm −3 .