Silicon carbide semiconductor device and method for manufacturing same

1. A silicon carbide semiconductor device having an element portion provided with a semiconductor element, and a termination portion surrounding said element portion, the silicon carbide semiconductor device comprising:

a silicon carbide substrate made of silicon carbide having a hexagonal single-crystal structure, said silicon carbide substrate having a first main surface and a second main surface opposite to said first main surface, said first main surface having a flat surface and a side wall surface, said flat surface being located in said element portion, said side wall surface being located in said termination portion, said side wall surface surrounding said flat surface, said side wall surface being inclined relative to said flat surface so as to come close to said second main surface, said silicon carbide substrate including a first impurity region, a second impurity region, and a third impurity region, said first impurity region having a first conductivity type, said second impurity region being provided on said first impurity region and having a second conductivity type, said third impurity region being provided on said second impurity region and being separated from said first impurity region by said second impurity region, each of said first to third impurity regions having a portion located on said flat surface;

a gate insulating film connecting said first and third impurity regions to each other on said flat surface of said first main surface;

a gate electrode provided on said gate insulating film;

a first main electrode in contact with said third impurity region on said flat surface of said first main surface;

a second main electrode provided on said second main surface; and

a side wall insulating film covering said side wall surface of said first main surface, said side wall surface being inclined by not less than 50° and not more than 80° relative to a {000-1} plane.

2. The silicon carbide semiconductor device according to claim 1 , wherein said side wall surface of said first main surface of said silicon carbide substrate includes a first plane having a plane orientation of {0-33-8}.

3. The silicon carbide semiconductor device according to claim 2 , wherein said side wall surface of said first main surface of said silicon carbide substrate microscopically includes said first plane, and said side wall surface microscopically further includes a second plane having a plane orientation of {0-11-1}.

4. The silicon carbide semiconductor device according to claim 3 , wherein said first and second planes of said side wall surface of said first main surface of said silicon carbide substrate form a combined plane having a plane orientation of {0-11-2}.

5. A silicon carbide semiconductor device having an element portion provided with a semiconductor element, and a termination portion surrounding said element portion, the silicon carbide semiconductor device comprising:

a silicon carbide substrate made of silicon carbide having a hexagonal single-crystal structure, said silicon carbide substrate having a first main surface and a second main surface opposite to said first main surface, said first main surface having a flat surface and a side wall surface, said flat surface being located in said element portion, said side wall surface being located in said termination portion, said side wall surface surrounding said flat surface, said side wall surface being inclined relative to said flat surface so as to come close to said second main surface, said silicon carbide substrate including a first impurity region, a second impurity region, and a third impurity region, said first impurity region having a first conductivity type, said second impurity region being provided on said first impurity region and having a second conductivity type, said third impurity region being provided on said second impurity region and being separated from said first impurity region by said second impurity region, each of said first to third impurity regions having a portion located on said flat surface;

a gate insulating film connecting said first and third impurity regions to each other on said flat surface of said first main surface;

a gate electrode provided on said gate insulating film;

a first main electrode in contact with said third impurity region on said flat surface of said first main surface;

a second main electrode provided on said second main surface; and

a side wall insulating film covering said side wall surface of said first main surface, said side wall surface having one of plane orientations of {0-33-8}, {0-11-2}, {0-11-1} and {0-11-1} when viewed macroscopically.

6. The silicon carbide semiconductor device according to claim 1 , wherein a side wall impurity region is provided at said side wall surface of said first main surface of said silicon carbide substrate, said side wall impurity region having said second conductivity type and being connected to said third impurity region.

7. The silicon carbide semiconductor device according to claim 1 , wherein said first main surface of said silicon carbide substrate has a bottom surface surrounding said side wall surface in said termination portion, and said bottom surface has a smaller inclination relative to said flat surface than an inclination of said side wall surface relative to said flat surface.

8. The silicon carbide semiconductor device according to claim 7 , wherein a guard ring region is provided at said bottom surface of said first main surface of said silicon carbide substrate, said guard ring region having said second conductivity type, said guard ring region being separated from said side wall surface, said guard ring region surrounding said side wall surface.

9. A method for manufacturing a silicon carbide semiconductor device having an element portion provided with a semiconductor element, and a termination portion surrounding said element portion, the method comprising the steps of:

preparing a silicon carbide substrate made of silicon carbide having a hexagonal single-crystal structure, said silicon carbide substrate having a first main surface and a second main surface opposite to said first main surface, said first main surface having a flat surface and a side wall surface, said flat surface being located in said element portion, said side wall surface being located in said termination portion, said side wall surface surrounding said flat surface, said side wall surface being inclined relative to said flat surface so as to come close to said second main surface, said silicon carbide substrate including a first impurity region, a second impurity region, and a third impurity region, said first impurity region having a first conductivity type, said second impurity region being provided on said first impurity region and having a second conductivity type, said third impurity region being provided on said second impurity region and being separated from said first impurity region by said second impurity region, each of said first to third impurity regions having a portion located on said flat surface, the step of preparing said silicon carbide substrate including the step of forming said side wall surface by removing a portion of said first main surface of said silicon carbide substrate through etching by heating said silicon carbide substrate while exposing a portion of said first main surface of said silicon carbide substrate to a gas containing a halogen element;

forming a gate insulating film connecting said first impurity region and said third impurity region to each other on said flat surface of said first main surface;

forming a side wall insulating film covering said side wall surface of said first main surface;

forming a gate electrode on said gate insulating film;

forming a first main electrode in contact with said third impurity region on said flat surface of said first main surface; and

forming a second main electrode on said second main surface.