Semiconductor stack
A semiconductor stack includes a substrate made of silicon carbide, and an epi layer disposed on the substrate and made of silicon carbide. An epi principal surface, which is a principal surface opposite to the substrate, of the epi layer is a carbon surface having an off angle of 4° or smaller relative to a c-plane. In the epi principal surface, a plurality of first recessed portions having a rectangular circumferential shape in a planar view is formed. Density of a second recessed portion that is formed in the first recessed portions and is a recessed portion deeper than the first recessed portions is lower than or equal to 10 cm −2 in the epi principal surface.
1. A semiconductor stack, comprising:
a substrate made of silicon carbide having a diameter greater than or equal to 150 mm; and
an epi layer disposed on the substrate and made of silicon carbide,
wherein the substrate and the epi layer are composed of 4H—SiC,
wherein an epi principal surface of the epi layer, the epi principal surface being a principal surface opposite to the substrate, is a carbon surface having an off angle of 4° or smaller relative to a c-plane,
wherein a plurality of first recessed portions having an outer shape of a rectangular shape in a planar view is formed in the epi principal surface, and
wherein density of a second recessed portion that is formed in the first recessed portions and is a recessed portion deeper than the first recessed portions, is lower than or equal to 10 cm −2 in the epi principal surface.
2. The semiconductor stack as claimed in claim 1 , wherein the first recessed portions are connected a threading dislocation that penetrates through the epi layer in a thickness direction.
3. The semiconductor stack as claimed in claim 1 , wherein the density of the second recessed portion exceeds 0 cm −2 in the epi principal surface.
4. The semiconductor stack as claimed in claim 2 , wherein the density of the second recessed portion exceeds 0 cm −2 in the epi principal surface.
5. The semiconductor stack as claimed in claim 3 ,
wherein a depth of the first recessed portions is shallower than or equal to 1 nm, and
wherein a depth of the second recessed portion is deeper than or equal to 10 nm.
6. The semiconductor stack as claimed in claim 5 , wherein the depth of the second recessed portion is deeper than or equal to 2 nm.
7. The semiconductor stack as claimed in claim 1 , wherein the density of the second recessed portion is lower than or equal to 1 cm −2 in the epi principal surface.
8. A semiconductor stack, comprising:
a substrate made of silicon carbide; and
an epi layer disposed on the substrate and made of silicon carbide,
wherein an epi principal surface of the epi layer, the epi principal surface being a principal surface opposite to the substrate, is a carbon surface having an off angle of 4° or smaller relative to a c-plane,
wherein a plurality of first recessed portions having an outer shape of a rectangular shape in a planar view is formed in the epi principal surface,
wherein the plurality of first recessed portions includes a multi-depth first recessed portion with a second recessed portion deeper than the first recessed portions, and a single-depth first recessed portion without the second recessed portion,
wherein a proportion of the multi-depth first recessed portion with the second recessed portion is lower than a proportion of the single-depth first recessed portion without the second recessed portion with respect to the plurality of first recessed portions, and
wherein density of the multi-depth first recessed portion with the second recessed portion is lower than or equal to 10 cm −2 in the epi principal surface.
9. The semiconductor stack as claimed in claim 8 , wherein the first recessed portions are connected a threading dislocation that penetrates through the epi layer in a thickness direction.
10. The semiconductor stack as claimed in claim 8 , wherein the density of the multi-depth first recessed portion with the second recessed portion exceeds 0 cm −2 in the epi principal surface.
11. The semiconductor stack as claimed in claim 8 , wherein the density of the multi-depth first recessed portion with the second recessed portion is lower than or equal to 1 cm −2 in the epi principal surface.
12. The semiconductor stack as claimed in claim 8 ,
wherein a depth of the first recessed portions is shallower than or equal to 1 nm, and
wherein a depth of the second recessed portion is deeper than or equal to 10 nm.