Silicon carbide semiconductor device
A silicon carbide semiconductor device includes a silicon carbide layer, an insulating layer, a Schottky electrode, and a reaction region. The silicon carbide layer includes a p type region in contact with a first main surface and an n type region in contact with the p type region and the first main surface. The insulating layer has a third main surface, a fourth main surface, and a side wall surface connecting the third main surface and the fourth main surface, and is in contact with the first main surface at the fourth main surface. The Schottky electrode is in contact with the first main surface and the side wall surface. The reaction region is in contact with the insulating layer, the Schottky electrode, and the p type region. The reaction region contains an element constituting the Schottky electrode, an element constituting the insulating layer, silicon, and carbon.
1. A silicon carbide semiconductor device, comprising
a silicon carbide layer which has a first main surface and a second main surface opposite to said first main surface, and includes a p type region in contact with said first main surface and an n type region in contact with said p type region and said first main surface;
an insulating layer which has a third main surface, a fourth main surface opposite to said third main surface, and a side wall surface connecting said third main surface and said fourth main surface, said insulating layer being in contact with said first main surface at said fourth main surface;
a Schottky electrode which is in contact with said first main surface and said side wall surface; and
a reaction region which is in contact with said insulating layer, said Schottky electrode, and said p type region, wherein
said reaction region contains an element constituting said Schottky electrode, an element constituting said insulating layer, silicon, and carbon, and
wherein all of said side wall surface and a portion of said third main surface are covered by a continuous portion of said Schottky electrode.
2. The silicon carbide semiconductor device according to claim 1 , wherein said side wall surface of said insulating layer is inclined with respect to said first main surface of said silicon carbide layer.
3. The silicon carbide semiconductor device according to claim 2 , wherein an angle formed between said side wall surface and said first main surface is more than or equal to 10° and less than or equal to 60°.
4. The silicon carbide semiconductor device according to claim 1 , wherein a contact resistance between said p type region of said silicon carbide layer and said reaction region is less than or equal to 0.1 Ωcm 2 .
5. The silicon carbide semiconductor device according to claim 1 , wherein
when viewed in a plan view, said p type region includes an inner end portion and an outer end portion opposite to said inner end portion, and
when viewed in a plan view, said reaction region is located between said inner end portion and said outer end portion.
6. The silicon carbide semiconductor device according to claim 1 , further comprising a guard ring region arranged to surround said p type region when viewed in a plan view.
7. The silicon carbide semiconductor device according to claim 1 , wherein said insulating layer contains silicon dioxide.
8. The silicon carbide semiconductor device according to claim 1 , wherein said Schottky electrode contains at least one element selected from the group consisting of titanium, molybdenum, nickel, gold, and tungsten.