Silicon carbide semiconductor device and method of manufacturing the same
A silicon carbide semiconductor device includes a silicon carbide layer having a first main surface and a second main surface opposite to the first main surface. In the second main surface of the silicon carbide layer, a trench having a depth in a direction from the second main surface toward the first main surface is provided, and the trench has a sidewall portion where a second layer and a third layer are exposed and a bottom portion, where a first layer is exposed. A position of the bottom portion of the trench in a direction of depth of the trench is located on a side of the second main surface relative to a site located closest to the first main surface in a region where the second layer and the first layer are in contact with each other, or located as deep as the site in the direction of depth.
1. A silicon carbide semiconductor device, comprising:
a silicon carbide layer having a first main surface and a second main surface opposite to said first main surface,
said silicon carbide layer including
a first layer forming said first main surface and having a first conductivity type,
a second layer provided in said first layer and having a second conductivity type different from said first conductivity type, and
a third layer provided on said second layer as being spaced apart from said first layer, forming a part of said second main surface, and having said first conductivity type,
said second main surface of said silicon carbide layer being provided with a trench having a depth in a direction from said second main surface toward said first main surface,
said trench having a sidewall portion where said second layer and said third layer are exposed and a bottom portion continuing to said sidewall portion, where said first layer is exposed;
a gate insulating film covering each of said sidewall portion and said bottom portion; and
a gate electrode provided on said gate insulating film,
in said direction of depth of said trench, a position of said bottom portion of said trench being located on a side of said second main surface relative to a site located closest to said first main surface in a region where said second layer and said first layer are in contact with each other, or located as deep as said site in said direction of depth wherein
said bottom portion of said trench includes a bottom surface extending in a direction crossing said sidewall portion,
said trench has a corner portion at a boundary portion between said bottom surface and said sidewall portion, and
said corner portion is located in said second layer.
2. The silicon carbide semiconductor device according to claim 1 , wherein
on said sidewall portion, said second layer is provided with a surface including a first surface having a plane orientation {0-33-8}.
3. The silicon carbide semiconductor device according to claim 1 , wherein
a portion of said gate insulating film covering said bottom portion is greater in thickness than a portion of said gate insulating film covering said sidewall portion.
4. The silicon carbide semiconductor device according to claim 1 , further comprising an embedded region having said second conductivity type in said first layer, wherein
said embedded region is spaced apart from said second layer by said first layer and distant from each of said sidewall portion and said bottom portion of said trench.
5. The silicon carbide semiconductor device according to claim 1 , wherein
an n-type is defined as said first conductivity type and a p-type is defined as said second conductivity type.