Method for manufacturing silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
A first main surface is a (000-1) plane or a plane inclined by an angle of less than or equal to 8° relative to the (000-1) plane. A reaction chamber has a cross-sectional area of more than or equal to 132 cm 2 and less than or equal to 220 cm 2 in a plane perpendicular to a direction of movement of a mixed gas. When an X axis indicates a first value and a Y axis indicates a second value, the first value and the second value fall within a hexagonal region surrounded by first coordinates, second coordinates, third coordinates, fourth coordinates, fifth coordinates and sixth coordinates in XY plane coordinates, where the first coordinates are (0.038, 0.0019), the second coordinates are (0.069, 0.0028), the third coordinates are (0.177, 0.0032), the fourth coordinates are (0.038, 0.0573), the fifth coordinates are (0.069, 0.0849), and the sixth coordinates are (0.177, 0.0964).
1. A method for manufacturing a silicon carbide epitaxial substrate, the method comprising:
preparing a silicon carbide single-crystal substrate having a first main surface and a second main surface opposite to the first main surface;
placing the silicon carbide single-crystal substrate in a reaction chamber having a substrate placement surface, such that the second main surface faces the substrate placement surface; and
forming a silicon carbide layer on the first main surface by supplying a mixed gas including silane, ammonia, a gas including carbon atoms and hydrogen to the reaction chamber, wherein
the first main surface is a (000-1) plane or a plane inclined by an angle of less than or equal to 8° relative to the (000-1) plane,
the reaction chamber has a cross-sectional area of more than or equal to 132 cm 2 and less than or equal to 220 cm 2 in a plane perpendicular to a direction of movement of the mixed gas,
in the forming of the silicon carbide layer, when an X axis indicates a first value representing, in percentage, a value obtained by dividing a flow rate of the silane by a flow rate of the hydrogen, and a Y axis indicates a second value representing a flow rate of the ammonia in sccm, the first value and the second value fall within a hexagonal region surrounded by first coordinates, second coordinates, third coordinates, fourth coordinates, fifth coordinates and sixth coordinates in XY plane coordinates,
the first coordinates are (0.038, 0.0019),
the second coordinates are (0.069, 0.0028),
the third coordinates are (0.177, 0.0032),
the fourth coordinates are (0.038, 0.0573),
the fifth coordinates are (0.069, 0.0849),
the sixth coordinates are (0.177, 0.0964), and
after the forming of the silicon carbide layer, an average value of carrier concentration in the silicon carbide layer is more than or equal to 1×10 15 cm −3 and less than or equal to 3×10 16 cm −3 .
2. The method for manufacturing a silicon carbide epitaxial substrate according to claim 1 , wherein
the mixed gas is supplied to the reaction chamber along a direction parallel to the first main surface, and exhausted from the reaction chamber along the direction parallel to the first main surface.
3. The method for manufacturing a silicon carbide epitaxial substrate according to claim 1 , wherein
the mixed gas is supplied to the reaction chamber along a direction perpendicular to the first main surface, and exhausted from the reaction chamber along a direction parallel to the first main surface.
4. The method for manufacturing a silicon carbide epitaxial substrate according to claim 1 , wherein
the mixed gas is supplied to the reaction chamber along a direction perpendicular to the first main surface, and exhausted from the reaction chamber along the direction perpendicular to the first main surface.
5. The method for manufacturing a silicon carbide epitaxial substrate according to claim 1 , wherein
the substrate placement surface has four substrate placement portions.
6. The method for manufacturing a silicon carbide epitaxial substrate according to claim 5 , wherein
the four substrate placement portions are rotationally symmetrically positioned with respect to a center of the substrate placement surface.
7. The method for manufacturing a silicon carbide epitaxial substrate according to claim 1 , wherein
the substrate placement surface has eight substrate placement portions.
8. The method for manufacturing a silicon carbide epitaxial substrate according to claim 7 , wherein
the eight substrate placement portions are rotationally symmetrically positioned with respect to a center of the substrate placement surface.
9. A method for manufacturing a silicon carbide semiconductor device, the method comprising:
preparing the silicon carbide epitaxial substrate manufactured with the method according to claim 1 ; and
processing the silicon carbide epitaxial substrate.
10. The method of claim 1 , wherein the gas including carbon atoms includes at least one of propane (C 3 H 8 ) gas, methane (CH 4 ) gas, ethane (C 2 H 6 ) gas and acetylene (C 2 H 2 ) gas.
11. A method for manufacturing a silicon carbide epitaxial substrate, the method comprising:
preparing a silicon carbide single-crystal substrate having a first main surface and a second main surface opposite to the first main surface;
placing the silicon carbide single-crystal substrate in a reaction chamber having a substrate placement surface, such that the second main surface faces the substrate placement surface; and
forming a silicon carbide layer on the first main surface by supplying a mixed gas including silane, ammonia, a gas including carbon atoms and hydrogen to the reaction chamber, wherein
the first main surface is a (000-1) plane or a plane inclined by an angle of less than or equal to 8° relative to the (000-1) plane,
the reaction chamber has a cross-sectional area of more than or equal to 132 cm 2 and less than or equal to 220 cm 2 in a plane perpendicular to a direction of movement of the mixed gas,
in the forming of the silicon carbide layer, when an X axis indicates a first value representing, in cm −2 , a value obtained by dividing a value, which is obtained by dividing a flow rate of the silane by a flow rate of the hydrogen, by the cross-sectional area, and a Y axis indicates a second value representing a flow rate of the ammonia in sccm, the first value and the second value fall within a hexagonal region surrounded by first coordinates, second coordinates, third coordinates, fourth coordinates, fifth coordinates and sixth coordinates in XY plane coordinates,
the first coordinates are (0.216×10 −5 , 0.0019),
the second coordinates are (0.393×10 −5 , 0.0028),
the third coordinates are (1.01×10 −5 , 0.0032),
the fourth coordinates are (0.216×10 −5 , 0.0573),
the fifth coordinates are (0.393×10 −5 , 0.0849),
the sixth coordinates are (1.01×10 −5 , 0.0964), and
after the forming of the silicon carbide layer, an average value of carrier concentration in the silicon carbide layer is more than or equal to 1×10 15 cm −3 and less than or equal to 3×10 16 cm −3 .
12. The method for manufacturing a silicon carbide epitaxial substrate according to claim 11 , wherein
the mixed gas is supplied to the reaction chamber along a direction parallel to the first main surface, and exhausted from the reaction chamber along the direction parallel to the first main surface.
13. The method for manufacturing a silicon carbide epitaxial substrate according to claim 11 , wherein
the mixed gas is supplied to the reaction chamber along a direction perpendicular to the first main surface, and exhausted from the reaction chamber along a direction parallel to the first main surface.
14. The method for manufacturing a silicon carbide epitaxial substrate according to claim 11 , wherein
the mixed gas is supplied to the reaction chamber along a direction perpendicular to the first main surface, and exhausted from the reaction chamber along the direction perpendicular to the first main surface.
15. The method for manufacturing a silicon carbide epitaxial substrate according to any claim 11 , wherein
the substrate placement surface has four substrate placement portions.
16. The method for manufacturing a silicon carbide epitaxial substrate according to claim 15 , wherein
the four substrate placement portions are rotationally symmetrically positioned with respect to a center of the substrate placement surface.
17. The method for manufacturing a silicon carbide epitaxial substrate according to claim 11 , wherein
the substrate placement surface has eight substrate placement portions.
18. The method for manufacturing a silicon carbide epitaxial substrate according to claim 17 , wherein
the eight substrate placement portions are rotationally symmetrically positioned with respect to a center of the substrate placement surface.
19. A method for manufacturing a silicon carbide semiconductor device, the method comprising:
preparing the silicon carbide epitaxial substrate manufactured with the method according to claim 11 ; and
processing the silicon carbide epitaxial substrate.
20. The method of claim 11 , wherein the gas including carbon atoms includes at least one of propane (C 3 H 8 ) gas, methane (CH 4 ) gas, ethane (C 2 H 6 ) gas and acetylene (C 2 H 2 ) gas.