Silicon carbide epitaxial substrate
A silicon carbide epitaxial substrate includes a silicon carbide substrate, a silicon carbide epitaxial film. The silicon carbide epitaxial film is on the silicon carbide substrate. The first extended defect is in the silicon carbide epitaxial film. The first extended defect includes a particle, a triangular defect extending from the particle along an off-direction, and a basal plane dislocation originating from the particle and having a portion extending along a direction perpendicular to each of a thickness direction of the silicon carbide substrate and the off-direction. In the direction perpendicular to each of the thickness direction of the silicon carbide substrate and the off-direction, an extended width of the basal plane dislocation is twice or more a base width of the triangular defect. In a second main surface, an area density of the basal plane dislocation included in the first extended defect is 3/cm 2 or less.
1. A silicon carbide epitaxial substrate comprising:
a silicon carbide substrate;
a silicon carbide epitaxial film on the silicon carbide substrate; and
a first extended defect in the silicon carbide epitaxial film,
wherein the silicon carbide epitaxial film has a first main surface in contact with the silicon carbide substrate and a second main surface opposite to the first main surface,
the second main surface is inclined in an off-direction with respect to a {0001} plane,
wherein the first extended defect includes
a particle,
a triangular defect extending from the particle along the off-direction, and
a basal plane dislocation originating from the particle and having a portion extending along a direction perpendicular to each of a thickness direction of the silicon carbide substrate and the off-direction,
in the direction perpendicular to each of the thickness direction of the silicon carbide substrate and the off-direction, an extended width of the basal plane dislocation is twice or more a base width of the triangular defect, and
in the second main surface, an area density of the basal plane dislocation included in the first extended defect is 3/cm 2 or less.
2. The silicon carbide epitaxial substrate according to claim 1 , wherein the silicon carbide epitaxial film has a thickness of 30 μm or more.
3. The silicon carbide epitaxial substrate according to claim 1 , wherein the second main surface is inclined in the off-direction at an angle of 5° or less with respect to the {0001} plane.
4. The silicon carbide epitaxial substrate according to claim 1 , wherein the silicon carbide substrate has a diameter of 100 mm or more.
5. The silicon carbide epitaxial substrate according to claim 1 , wherein a polytype of the silicon carbide substrate is 4H.
6. A silicon carbide epitaxial substrate comprising:
a silicon carbide substrate;
a silicon carbide epitaxial film on the silicon carbide substrate; and
a first extended defect in the silicon carbide epitaxial film,
wherein the silicon carbide epitaxial film has a first main surface in contact with the silicon carbide substrate and a second main surface opposite to the first main surface,
the second main surface is inclined in an off-direction with respect to a {0001} plane,
wherein the first extended defect includes
a particle,
a triangular defect extending from the particle along the off-direction, and
a basal plane dislocation originating from the particle and having a portion extending along a direction perpendicular to each of a thickness direction of the silicon carbide substrate and the off-direction,
in the direction perpendicular to each of the thickness direction of the silicon carbide substrate and the off-direction, an extended width of the basal plane dislocation is twice or more a base width of the triangular defect,
in the second main surface, an area density of the basal plane dislocation included in the first extended defect is 3/cm 2 or less,
the silicon carbide epitaxial film has a thickness of 30 μm or more,
the second main surface is inclined in the off-direction at an angle of 5° or less with respect to the {0001} plane,
the silicon carbide substrate has a diameter of 100 mm or more, and
a polytype of the silicon carbide substrate is 4H.