Silicon carbide semiconductor device
A silicon carbide semiconductor device includes a silicon carbide substrate, and a contact electrode. The silicon carbide substrate includes an n type region and a p type region in contact with the n type region. The contact electrode forms contact with the silicon carbide substrate. The contact electrode includes a first region containing TiSi, and a second region containing Al. The first region includes an n contact region in contact with the n type region and a p contact region in contact with the p type region. The second region is formed to contact the p type region and the n type region, and to surround the p contact region and the n contact region. Accordingly, there can be provided a silicon carbide semiconductor device including an electrode allowing ohmic contact with both a p type impurity region and an n type impurity region formed at a silicon carbide substrate.
1. A silicon carbide semiconductor device comprising:
a silicon carbide substrate including an n type region and a p type region in contact with said n type region, and
a contact electrode in contact with said silicon carbide substrate,
said contact electrode including a first region containing TiSi and a second region containing Al,
said first region including an n contact region in contact with said n type region and a p contact region in contact with said p type region,
said second region formed in contact with said p type region and said n type region, and surrounding said p contact region and said n contact region.
2. The silicon carbide semiconductor device according to claim 1 , wherein said contact electrode includes a region where the number of carbon atoms is larger than the number of silicon atoms.
3. The silicon carbide semiconductor device according to claim 1 , wherein said second region is formed to cover said p contact region and said n contact region.
4. The silicon carbide semiconductor device according to claim 1 , wherein, when the number of Ti atoms is x, the number of Al atoms is y, and the number of Si atoms is z in said contact electrode, a ratio of two arbitrary number of atoms from x, y and z is greater than or equal to 1/3 and less than or equal to 3.
5. The silicon carbide semiconductor device according to claim 1 , wherein a width of each of said p contact region and said n contact region in a direction parallel to a main face of said silicon carbide substrate is less than or equal to 500 nm.
6. The silicon carbide semiconductor device according to claim 1 , wherein said contact electrode further includes a third region containing TiC.