Silicon carbide epitaxial substrate
The first area density is 0.03/cm 2 or more, and a value obtained by dividing the second area density by a sum of the first area density and the second area density is 10% or less. As viewed in a direction perpendicular to the main surface, the first recess extends in a straight line along a direction inclined with respect to each of the first direction and a second direction perpendicular to the first direction, and a first-direction-side end portion of the first recess is contiguous to a 4H polytype region, and as viewed in the direction perpendicular to the main surface, the second recess extends in a straight line along a direction inclined with respect to each of the first direction and the second direction, and a first-direction-side end portion of the second recess is contiguous to a 3C polytype region.
1 . A silicon carbide epitaxial substrate comprising:
a silicon carbide substrate including a plurality of screw dislocations; and
a silicon carbide epitaxial layer being on the silicon carbide substrate,
wherein the silicon carbide epitaxial layer has a boundary surface in contact with the silicon carbide substrate and a main surface opposite to the boundary surface,
the main surface is a plane tilted relative to a {0001} plane in a first direction,
when a recess originating from a first screw dislocation among the plurality of screw dislocations is a first recess, a recess originating from a second screw dislocation among the plurality of screw dislocations is a second recess, an area density of the first recess is a first area density, and an area density of the second recess is a second area density, the first area density is 0.03/cm 2 or more, and a value obtained by dividing the second area density by a sum of the first area density and the second area density is 10% or less,
as viewed in a direction perpendicular to the main surface, the first recess extends in a straight line along a direction inclined with respect to each of the first direction and a second direction perpendicular to the first direction, and a first-direction-side end portion of the first recess is contiguous to a 4H polytype region, and
as viewed in the direction perpendicular to the main surface, the second recess extends in a straight line along a direction inclined with respect to each of the first direction and the second direction, and a first-direction-side end portion of the second recess is contiguous to a 3C polytype region.
2 . A silicon carbide epitaxial substrate comprising:
a silicon carbide substrate including a plurality of screw dislocations; and
a silicon carbide epitaxial layer being on the silicon carbide substrate,
wherein the silicon carbide epitaxial layer has a boundary surface in contact with the silicon carbide substrate and a main surface opposite to the boundary surface,
the main surface is a plane tilted relative to a {0001} plane in a first direction,
when a recess originating from a first screw dislocation among the plurality of screw dislocations is a first recess, a recess originating from a second screw dislocation among the plurality of screw dislocations is a second recess, an area density of the first recess is a first area density, and an area density of the second recess is a second area density, the first area density is 0.03/cm 2 or more, and a value obtained by dividing the second area density by a sum of the first area density and the second area density is 10% or less,
as viewed in a direction perpendicular to the main surface, the first recess extends in a straight line along a direction inclined with respect to each of the first direction and a second direction perpendicular to the first direction, and a first-direction-side end portion of the first recess is contiguous to a fourth region,
as viewed in the direction perpendicular to the main surface, the second recess extends in a straight line along a direction inclined with respect to each of the first direction and the second direction, and a first-direction-side end portion of the second recess is contiguous to a second region,
when photoluminescence light generated from the fourth region upon irradiation of the fourth region with excitation light is expressed in RGB color space, R is 161 to 231, G is 224 to 254, and B is 252 to 255, and
when photoluminescence light generated from the second region upon irradiation of the second region with excitation light is expressed in RGB color space, R is 56 to 115, G is 71 to 128, and B is 56 to 123.
3 . A silicon carbide epitaxial substrate comprising:
a silicon carbide substrate including a plurality of screw dislocations; and
a silicon carbide epitaxial layer being on the silicon carbide substrate,
wherein the silicon carbide epitaxial layer has a boundary surface in contact with the silicon carbide substrate and a main surface opposite to the boundary surface,
the main surface is a plane tilted relative to a {0001} plane in a first direction,
when a recess originating from a first screw dislocation among the plurality of screw dislocations is a first recess, a recess originating from a second screw dislocation among the plurality of screw dislocations is a second recess, an area density of the first recess is a first area density, and an area density of the second recess is a second area density, the first area density is 0.03/cm 2 or more, and a value obtained by dividing the second area density by a sum of the first area density and the second area density is 10% or less,
as viewed in a direction perpendicular to the main surface, the first recess extends in a straight line along a direction inclined with respect to each of the first direction and a second direction perpendicular to the first direction,
as viewed in the direction perpendicular to the main surface, the second recess extends in a straight line along a direction inclined with respect to each of the first direction and the second direction, and a first-direction-side end portion of the second recess is contiguous to an uneven region,
the uneven region is located between a first line segment contiguous to the second recess and a second line segment contiguous to the second recess and inclined with respect to the first line segment as viewed in the direction perpendicular to the main surface, and
the uneven region is spaced apart from the first recess.
4 . The silicon carbide epitaxial substrate according to claim 1 , wherein, in a cross section perpendicular to a direction in which the first recess extends, a pair of first projecting portions is provided beside both sides of the first recess.
5 . The silicon carbide epitaxial substrate according to claim 1 , wherein, in a cross section perpendicular to a direction in which the second recess extends, a pair of second projecting portions is provided beside both sides of the second recess.
6 . A silicon carbide epitaxial substrate comprising:
a silicon carbide substrate including a plurality of screw dislocations; and
a silicon carbide epitaxial layer being on the silicon carbide substrate,
wherein the silicon carbide epitaxial layer has a boundary surface in contact with the silicon carbide substrate and a main surface opposite to the boundary surface,
the main surface is a plane tilted relative to a {0001} plane in a first direction,
when a defect originating from a first screw dislocation among the plurality of screw dislocations is a first defect, a defect originating from a second screw dislocation among the plurality of screw dislocations is a second defect, an area density of the first defect is a first area density, and an area density of the second defect is a second area density, the first area density is 0.03/cm 2 or more, and a value obtained by dividing the second area density by a sum of the first area density and the second area density is 10% or less,
the first defect includes a fourth region that is polygonal and surrounded by a first region as viewed in a direction perpendicular to the main surface,
the second defect includes a third region that is polygonal as viewed in the direction perpendicular to the main surface, and a second region in contact with the third region, when photoluminescence light generated from the fourth region upon irradiation of the fourth region with excitation light is expressed in RGB color space, R is 161 to 231, G is 224 to 254, and B is 252 to 255,
when photoluminescence light emitted from the first region upon irradiation of the first region with excitation light is expressed in RGB color space, R is 140 to 180, G is 130 to 190, and B is 130 to 190,
when photoluminescence light generated from the second region upon irradiation of the second region with excitation light is expressed in RGB color space, R is 56 to 115, G is 71 to 128, and B is 56 to 123, and
when photoluminescence light generated from the third region upon irradiation of the third region with excitation light is expressed in RGB color space, R is 161 to 231, G is 224 to 254, and B is 252 to 255.