Silicon carbide semiconductor device and method for manufacturing same
The present invention provides a silicon carbide semiconductor device having an ohmic electrode improved in adhesion of a wire thereto by preventing deposition of carbon so as not to form a Schottky contact, as well as a method for manufacturing such a silicon carbide semiconductor device. In the SiC semiconductor device, upon forming the ohmic electrode, a first metal layer made of one first metallic element is formed on one main surface of a SiC layer. Further, a Si layer made of Si is formed on an opposite surface of the first metal layer to its surface facing the SiC layer. The stacked structure thus formed is subjected to thermal treatment. In this way, there can be obtained a silicon carbide semiconductor device having an ohmic electrode adhered well to a wire by preventing deposition of carbon atoms on the surface layer of the electrode and formation of a Schottky contact resulting from Si and SiC.
1. A silicon carbide semiconductor device comprising:
a SiC layer made of silicon carbide; and
a silicide layer disposed on one main surface of said SiC layer, made of an alloy of one first metallic element and silicon, and containing no carbon atoms,
said silicide layer directly contacts said SiC layer,
said SiC layer and said silicide layer being in ohmic contact with each other,
said surface layer of said silicide layer having an upper surface exposed to allow a wire to be connected thereto.
2. The silicon carbide semiconductor device according to claim 1 , wherein said first metallic element is one element selected from a group consisting of nickel, titanium, aluminum, platinum, tungsten, and palladium.
3. A silicon carbide semiconductor device comprising:
a SiC layer made of silicon carbide;
a carbon-containing silicide layer disposed on one main surface of said SiC layer, made of an alloy of one first metallic element and silicon, and containing carbon atoms; and
a silicide layer disposed on an opposite main surface of said carbon-containing silicide layer to its surface facing said SiC layer, made of an alloy of said one first metallic element and silicon, and containing no carbon atoms at its surface layer opposite to its surface facing said carbon-containing silicide layer,
said SiC layer and said carbon-containing silicide layer being in ohmic contact with each other,
said surface layer of said silicide layer containing no carbon atoms at said surface layer having an upper surface exposed to allow a wire to be connected thereto.
4. The silicon carbide semiconductor device according to claim 3 , wherein said first metallic element is one element selected from a group consisting of nickel, titanium, aluminum, platinum, tungsten, and palladium.
5. A silicon carbide semiconductor device comprising:
a SiC layer made of silicon carbide;
a silicide layer disposed on one main surface of said SiC layer, made of an alloy of one first metallic element and silicon, and containing no carbon atoms at its surface layer opposite to its surface facing said SiC layer; and
an upper silicide layer formed directly on the surface layer of said silicide layer, made of an alloy of one second metallic element and silicon, and containing no carbon atoms at its surface layer opposite to its surface facing said silicide layer,
said SiC layer and said silicide layer being in ohmic contact with each other,
said surface layer of said upper silicide layer having an upper surface exposed to allow a wire to be connected thereto.
6. The silicon carbide semiconductor device according to claim 5 , wherein said second metallic element is one element selected from a group consisting of titanium, aluminum, and chromium.
7. The silicon carbide semiconductor device according to claim 5 , wherein said first metallic element is one element selected from a group consisting of nickel, titanium, aluminum, platinum, tungsten, and palladium.
8. A silicon carbide semiconductor device comprising:
a SiC layer made of silicon carbide;
a carbon-containing silicide layer disposed on one main surface of said SiC layer, made of an alloy of one first metallic element and silicon, and containing carbon atoms;
a silicide layer disposed on an opposite main surface of said carbon-containing silicide layer to its surface facing said SiC layer, made of an alloy of said one first metallic element and silicon, and containing no carbon atoms at its surface layer opposite to its surface facing said carbon-containing silicide layer; and
an upper silicide layer formed on the surface layer of said silicide layer, made of an alloy of one second metallic element and silicon, and containing no carbon atoms at its surface layer opposite to its surface facing said silicide layer,
said SiC layer and said carbon-containing silicide layer being ohmic contact with each other,
said surface layer of said upper silicide layer having an upper surface exposed to allow a wire to be connected thereto.
9. The silicon carbide semiconductor device according to claim 8 , wherein said second metallic element is one element selected from a group consisting of titanium, aluminum, and chromium.
10. The silicon carbide semiconductor device according to claim 8 , wherein said first metallic element is one element selected from a group consisting of nickel, titanium, aluminum, platinum, tungsten, and palladium.