IP Library › Assignment 039800/0648
Patent Assignment
Reel/Frame 039800/0648

Assignment of Assignor's Interest

Recorded: 2016-09-20 Pages: 4
Assignor
LI, YUZHU
Executed: 2016-09-18
Assignee
CHANGZHOU ZHONGMIN SEMI-TECH CO. LTD.
1668 JINTAN HUACHENG RD., INTER. INDUSTRIAL PARK, CHANGZHOU, JIANGSU, 213200, CHINA
Covered Properties (7)
Insulated Gate Bipolar Device
Patent: 9,634,131 →
Application: 15/016,254 →
Publication: US 2016/0233324
Method of Forming a Trench in a Semiconductor Device
Patent: 9,583,605 →
Application: 15/016,255 →
Publication: US 2016/0233105
Semiconductor Device
Patent: 9,478,649 →
Application: 15/016,258 →
Publication: US 2016/0240639
Insulated Gate Bipolar Device
Application: 62/112,265 →
Method of Forming a Trench in a Semiconductor Device
Application: 62/126,937 →
Semiconductor Device
Application: 62/126,961 →
Semiconductor Device
Application: 62/148,921 →