Insulated gate bipolar device
A semiconductor device includes: metal collector layer on backside, P-type collector layer, N-type field stop layer and N− drift layer. There are active cells and dummy cells on top of the device. The active cell and dummy cell are separated by gate trench. The gate trench is formed by polysilicon and gate oxide layer. There are N+ region and P+ region in active cells, and they are connected to metal emitter layer through the window in the insulation layer. There are P-well regions in both active cells and dummy cells. The P-well regions in active cells are continuous and connected to emitter electrode through P+ region. The P-well regions in dummy cells are discontinuous and electrically floating.
1. A semiconductor device having a front side and a back side opposing the front side, which comprises:
a) a metal collector layer on the backside,
b) a layered semiconductor material disposed on the metal collector layer being selectively doped to provide;
i) a first P-type collector layer disposed on the metal collector layer,
ii) an N-type field stop layer disposed on the P-type collector layer; and
iii) a lightly doped N-type drift layer disposed on the N-type stop layer,
c) a gate trench having a conductive core that is surrounded by a gate oxide layer, that extends at least partially within the N-drift layer to subdivide the N-drift layer into an active cell region and a dummy cell region, which are disposed proximal to the front side of the device,
d) an insulation layer at least partially covering the N-drift layer and the gate trench formed therein,
e) a metal emitter layer disposed on the insulation layer and connected through a window in the insulation layer to the active cells region, which comprise:
i) one or more N+ region alternating with a plurality of P+ regions,
ii) a first P-well region disposed between the alternating N+ and P+ regions and the N− drift layer, the first P-well regions in active cells being continuous in a first direction along the gate trench and connected to the metal emitter electrode through the P+ regions,
f) wherein the dummy cell region comprises one or more second P-well regions that are surrounded by the N− drift layer and isolated from the metal emitter layer by the insulation layer.
2. The semiconductor device according to claim 1 wherein the one or more second P-well regions are discontinuous and extend in the direction of the gate trench a shorter distance than the first P-well regions.
3. The semiconductor device according to claim 2 , which further comprises a polysilicon-bridge disposed between the dummy cell region and a portion of the insulating layer to overlay the second P-well regions.
4. The semiconductor device according to claim 3 further comprising holes in the polysilicon-bridge.
5. The semiconductor device according to claim 1 , wherein the semiconductor device has P and N material selected from the group consisting of silicon, silicon carbide and gallium nitride.
6. The semiconductor device according to claim 4 , wherein the semiconductor device has P and N material selected from the group consisting of silicon, silicon carbide and gallium nitride.
7. The semiconductor device according to claim 1 , wherein the semiconductor device has P and N material selected from the group consisting of silicon, silicon carbide and gallium nitride.
8. The semiconductor device according to claim 1 wherein the conductive core of the gate trench is polysilicon.
9. The semiconductor device according to claim 2 wherein the conductive core of the gate trench is polysilicon.
10. The semiconductor device according to claim 3 wherein the conductive core of the gate trench is polysilicon.
11. The semiconductor device according to claim 1 , which further comprises a polysilicon-bridge disposed between the dummy cell region and a portion of the insulating layer to overlay the second P-well regions.