Patent Assignment
Reel/Frame 043172/0946
Assignment of Assignor's Interest
Recorded: 2017-08-02
Pages: 2
Assignors
MORE, SHAHAJI B.
Executed: 2017-07-31
PAN, ZHENG-YANG
Executed: 2017-07-31
WANG, CHUN-CHIEH
Executed: 2017-07-31
CHANG, SHIH-CHIEH
Executed: 2017-07-31
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK, HSINCHU, 300-78, TAIWAN
Covered Property
(1)
Methods for Forming Transistor Gates with Hafnium Oxide Layers and Lanthanum Oxide Layers