Patent Assignment
Reel/Frame 045132/0138
Assignment of Assignor's Interest
Recorded: 2018-03-07
Pages: 3
Assignor
TAKAHASHI, TETSUO
Executed: 2015-07-06
Assignee
MITSUBISHI ELECTRIC CORPORATION
7-3, MARUNOUCHI 2-CHOME, CHIYODA-KU, TOKYO, 1008310, JAPAN
Covered Property
(1)
Power Semiconductor Device Having Trench Gate Type Igbt and Diode Regions