Power semiconductor device having trench gate type IGBT and diode regions
Switching loss is reduced. A first surface of a semiconductor substrate has a portion included in an IGBT region and a portion included in a diode region. Trenches formed in the first surface include a gate trench and a boundary trench disposed between the gate trench and the diode region. A fourth layer of the semiconductor substrate is provided on the first surface and has a portion included in the diode region. The fourth layer includes a trench-covering well region that covers the deepest part of the boundary trench, a plurality of isolated well regions, and a diffusion region that connects the trench-covering well region and the isolated well regions. The diffusion region has a lower impurity concentration than that of the isolated well regions. A first electrode is in contact with the isolated well regions and away from the diffusion region.
1. A power semiconductor device having an IGBT region that includes a plurality of cells, and a diode region for reverse conduction of said IGBT region, the power semiconductor device comprising:
a semiconductor substrate having a first surface and a second surface opposite said first surface, said first surface having a portion included in said IGBT region and a portion included in said diode region, said semiconductor substrate including,
a first layer of a first conductivity type that is provided on said second surface and is at least partially included in said diode region,
a second layer of said first conductivity type that is in contact with said first layer in said diode region, and
a third layer of a second conductivity type that is provided on said first surface and away from said second surface, is at least partially included in said diode region, and is in contact with said second layer, said second conductivity type being different from said first conductivity type;
an interlayer insulating film that is provided on said first surface of said semiconductor substrate and has a diode opening that exposes part of said third layer;
a first electrode that is provided on said interlayer insulating film and is in contact with said third layer through said diode opening; and
a second electrode that is provided on said second surface of said semiconductor substrate and is in contact with said first layer,
wherein said third layer includes a first region and a plurality of second regions, said first region being provided on the whole of said first surface in said diode region, said plurality of second regions being spaced from each other on said first region, and said plurality of second regions having a higher impurity concentration than an impurity concentration of said first region when impurity concentrations in a direction parallel to said first surface of said semiconductor substrate are compared, and
wherein said first electrode is in contact with only said plurality of second regions of said third layer.