Patent Assignment
Reel/Frame 046267/0422
Assignment of Assignor's Interest
Recorded: 2018-07-05
Pages: 18
Assignors
LAM, STEPHEN
Executed: 2016-04-21
CIPLICKAS, DENNIS
Executed: 2016-04-15
BROZEK, TOMASZ
Executed: 2016-04-20
CHENG, JEREMY
Executed: 2016-05-06
COMENSOLI, SIMONE
Executed: 2016-04-13
DE, INDRANIL
Executed: 2016-04-12
DOONG, KELVIN
Executed: 2016-04-28
EISENMANN, HANS
Executed: 2016-04-26
FISCUS, TIMOTHY
Executed: 2016-04-13
HAIGH, JONATHAN
Executed: 2016-04-13
HESS, CHRISTOPHER
Executed: 2016-04-12
KIBARIAN, JOHN
Executed: 2016-04-18
LEE, SHERRY
Executed: 2016-04-14
LIAO, MARCI
Executed: 2016-04-15
LIN, SHENG-CHE
Executed: 2016-04-28
MATSUHASHI, HIDEKI
Executed: 2016-04-25
MICHAELS, KIMON
Executed: 2016-04-18
O'SULLIVAN, CONOR
Executed: 2016-04-21
RAUSCHER, MARKUS
Executed: 2016-04-26
ROVNER, VYACHESLAV
Executed: 2016-04-13
STROJWAS, ANDRZEJ
Executed: 2016-04-28
STROJWAS, MARCIN
Executed: 2016-04-13
TAYLOR, CARL
Executed: 2016-04-13
VALLISHAYEE, RAKESH
Executed: 2016-04-12
WEILAND, LARG
Executed: 2016-04-21
YOKOYAMA, NOBUHARU
Executed: 2016-04-13
Assignee
PDF SOLUTIONS, INC.
333 W. SAN CARLOS ST., STE 1000, SAN JOSE, CALIFORNIA, 95110
Covered Properties
(4)
Method For Processing A Semiconductor Wafer Using Non-Contact Electrical Measurements Indicative Of At Least One Tip-To-Tip Short Or Leakage, At Least One Tip-To-Side Short Or Leakage, And At Least One Side-To-Side Short Or Leakage, Where Such Measurements Are Obtained From Cells With Respective Tip-To-Tip Short, Tip-To-Side Short, And Side-To-Side Short Test Areas, Using A Charged Particle-Beam Inspector With Beam Deflection To Account For Motion Of The Stage
Patent:
10,199,290 →
Application:
16/019,942 →
Method for Processing a Semiconductor Wafer Using Non-Contact Electrical Measurements Indicative of at Least One Tip-to-Side Short or Leakage, at Least One Side-to-Side Short or Leakage, and at Least One via-Chamfer Short or Leakage, Where Such Measurements Are Obt
Application:
16/020,345 →
Method For Processing A Semiconductor Wafer Using Non-Contact Electrical Measurements Indicative Of At Least One Tip-To-Tip Short Or Leakage, At Least One Via-Chamfer Short Or Leakage, And At Least One Corner Short Or Leakage, Where Such Measurements Are Obtained From Cells With Respective Tip-To-Tip Short, Via-Chamfer Short, And Corner Short Test Areas, Using A Charged Particle-Beam Inspector With Beam Deflection To Account For Motion Of The Stage
Patent:
10,290,552 →
Application:
16/024,054 →
Method For Processing A Semiconductor Wafer Using Non-Contact Electrical Measurements Indicative Of At Least One Side-To-Side Short Or Leakage, At Least One Via-Chamfer Short Or Leakage, And At Least One Corner Short Or Leakage, Where Such Measurements Are Obtained From Cells With Respective Side-To-Side Short, Via-Chamfer Short, And Corner Short Test Areas, Using A Charged Particle-Beam Inspector With Beam Deflection To Account For Motion Of The Stage
Patent:
10,199,294 →
Application:
16/024,856 →
Related Assignments
(1)
Other recorded transfers of the patents in this record — the chain of ownership.