Patent Assignment
Reel/Frame 046346/0797
Assignment of Assignor's Interest
Recorded: 2018-07-13
Pages: 3
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK, HSINCHU, 300-78, TAIWAN
Covered Property
(1)
Structure and Method for FinFET Device with Contact Over Dielectric Gate