IP Library › Assignment 046562/0101
Patent Assignment
Reel/Frame 046562/0101

Assignment of Assignor's Interest

Recorded: 2018-08-06 Pages: 4
Assignors
FIDELIX CO., LTD.
Executed: 2018-08-01
NEMOSTECH CO., LTD.
Executed: 2018-08-01
Assignee
DOSILICON CO., LTD.
ROOM 203/03, BUILDING 1, 498 GUOSHOUJING ROAD, ZHANGJIANG HIGH-TECH PARK, SHANGHAI, CHINA
Covered Properties (3)
Flash Memory Device Reducing Layout Area
Patent: 9,087,589 →
Application: 14/154,617 →
Publication: US 2014/0233313
Flash Memory Device Reducing Noise Peak and Program Time and Programming Method Thereof
Patent: 9,117,539 →
Application: 14/303,061 →
Publication: US 2015/0063029
High-Voltage Switching Circuit for Flash Memory Device
Patent: 9,324,445 →
Application: 14/723,639 →
Publication: US 2015/0364203
Related Assignments (3)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Jan 14, 2014
From: KANG, TAE GYOUNG; YOON, HOON MO
To: FIDELIX CO., LTD.; NEMOSTECH CO., LTD.
Reel/Frame 032018/0799 →
Assignment of Assignor's Interest Jun 12, 2014
From: LEE, JONG CHEOL
To: FIDELIX CO., LTD.; NEMOSTECH CO., LTD.
Reel/Frame 033091/0558 →
Assignment of Assignor's Interest May 28, 2015
From: LEE, HAE UK; SOH, MAN SEOK
To: FIDELIX CO., LTD.; NEMOSTECH CO., LTD.
Reel/Frame 035730/0322 →