Patent Assignment
Reel/Frame 049568/0404
Assignment of Assignor's Interest
Recorded: 2019-06-24
Pages: 6
Assignors
JEONG, JAE KYEONG
Executed: 2019-06-11
SONG, YUN HEUB
Executed: 2019-06-11
CHOI, CHANG HWAN
Executed: 2019-06-13
SEUL, HYEON JOO
Executed: 2019-06-13
Assignee
SAMSUNG ELECTRONICS CO., LTD.
129, SAMSUNG -RO, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO,, 16677, KOREA, REPUBLIC OF
Covered Property
(1)
Thin Film Transistor and Vertical Non-Volatile Memory Device Including Transition Metal-Induced Polycrystalline Metal Oxide Channel Layer