Patent Assignment
Reel/Frame 049617/0685
Assignment of Assignor's Interest
Recorded: 2019-06-28
Pages: 4
Assignor
XIAO, LI HONG
Executed: 2019-03-28
Assignee
YANGTZE MEMORY TECHNOLOGIES CO., LTD.
18 GAOXIN 4TH ROAD, EAST LAKE HIGH-TECH DEVELOPMENT ZONE, WUHAN, HUBEI, CHINA
Covered Property
(1)
Memory Stacks Having Silicon Nitride Gate-to-Gate Dielectric Layers and Methods for Forming the Same