Patent Assignment
Reel/Frame 050003/0675
Assignment of Assignor's Interest
Recorded: 2019-08-08
Pages: 2
Assignor
FAN, CHENG-HSIANG
Executed: 2019-06-20
Assignee
NANYA TECHNOLOGY CORPORATION
NO.98, NANLIN RD., TAISHAN DIST.,, NEW TAIPEI CITY, 243, TAIWAN
Covered Property
(1)
Semiconductor Memory Structure Having Drain Stressor, Source Stressor and Buried Gate and Method of Manufacturing the Same