Patent Assignment
Reel/Frame 050979/0275
Assignment of Assignor's Interest
Recorded: 2019-11-11
Pages: 29
Assignor
DOW SILICONES CORPORATION
Executed: 2019-08-23
Assignee
DDP SPECIALTY ELECTRONIC MATERIALS US 9, LLC
974 CENTRE ROAD, WILMINGTON, DELAWARE, 19805
Covered Properties
(9)
Method of Reducing Memory Effects in Semiconductor Epitaxy
Application:
61/058,660 →
High Voltage Power Semiconductor Devices on Sic
Application:
61/699,797 →
Flat Sic Semiconductor Substrate
Application:
61/719,310 →
Method to Reduce Dislocations in Sic Crystal Growth
Application:
61/761,165 →
Sic Crystal and Wafer Cut from Crystal with Low Dislocation Density
Application:
61/761,171 →
Sic Crystal with Low Dislocation Density
Application:
61/761,179 →
SiC SUBSTRATE WITH SiC EPITAXIAL FILM
Application:
61/798,819 →
Large Diameter Semiconductor Wafer for Integration with Power Device Manufacturing Technology
Application:
62/030,490 →
Furnace for Seeded Sublimation of Wide Band Gap Crystals
Application:
62/112,622 →
Related Assignments
(1)
Other recorded transfers of the patents in this record — the chain of ownership.