Patent Assignment
Reel/Frame 056404/0733
Assignment of Assignor's Interest
Recorded: 2021-06-01
Pages: 4
Assignors
CHIU, WEI-CHAO
Executed: 2021-05-02
CHEN, YU-WEN
Executed: 2021-05-03
LIOU, YONG-JIN
Executed: 2021-05-03
CHANG, CHUN-WEI
Executed: 2021-05-31
KUO, CHING-SEN
Executed: 2021-05-02
SHIU, FENG-JIA
Executed: 2021-05-02
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK, HSINCHU, 300-78, TAIWAN
Covered Properties
(2)
Method for Forming Deep Trench Isolation in an Imaging Sensor by Separately Forming First Set of Deep Trenches in First Direction Then Forming Second Set of Deep Trenches in Second Direction
Application:
17/303,524 →
Publication:
US 2022/0285203
Double Patterning Techniques for Forming a Deep Trench Isolation Structure
Application:
63/200,387 →