Patent Assignment
Reel/Frame 057987/0776
Assignment of Assignor's Interest
Recorded: 2021-11-02
Pages: 3
Assignor
TSAI, HUNG-CHI
Executed: 2019-10-24
Assignee
NANYA TECHNOLOGY CORPORATION
NO.98, NANLIN RD., TAISHAN DIST., NEW TAIPEI CITY, 243, TAIWAN
Covered Property
(1)
Method for Fabricating Semiconductor Device with Porous Dielectric Structure
Application:
17/516,688 →
Publication:
US 2022/0059686