Patent Assignment
Reel/Frame 060089/0958
Assignment of Assignor's Interest
Recorded: 2022-06-02
Pages: 3
Assignor
FUNG, KA-HING
Executed: 2016-12-26
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK, HSINCHU, 300-78, TAIWAN
Covered Property
(1)
Method of Forming FinFET with Low-Dielectric-Constant Gate Electrode Spacers