Patent Assignment
Reel/Frame 061088/0352
Assignment of Assignor's Interest
Recorded: 2022-09-14
Pages: 5
Assignee
HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD.
NO.6, LIANHUI STREET, XIXING STREET, BINJIANG DISTRICT, HANGZHOU CITY, ZHEJIANG PROVINCE, 310051, CHINA
Covered Property
(1)
Method for Manufacturing Conducting Path in Doped Region, Trench-Type Mosfet Device and Manufacturing Method Thereof
Application:
17/944,284 →
Publication:
US 2023/0077336
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.