Patent Assignment
Reel/Frame 061843/0386
Assignment of Assignor's Interest
Recorded: 2022-11-21
Pages: 6
Assignors
SUTO, TAKERU
Executed: 2022-10-26
WATANABE, NAOKI
Executed: 2022-10-26
SUEMATSU, TOMOKA
Executed: 2022-10-27
MIKI, HIROSHI
Executed: 2022-10-26
Assignee
HITACHI POWER SEMICONDUCTOR DEVICE, LTD.
2-2, OMIKA-CHO 5-CHOME, HITACHI-SHI, IBARAKI, 319-1221, JAPAN
Covered Property
(1)
Trenched Gate Double Diffused Semiconductor Device with Channel Impurity Concentration Adjustment Region
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.