IP Library Assignment 062407/0177
Patent Assignment
Reel/Frame 062407/0177

Assignment of Assignor's Interest

Recorded: 2023-01-18 Pages: 4
Assignor
SONG, YUN HEUB
Executed: 2023-01-11
Assignee
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
HANYANG UNIVERSITY, 222, WANGSIMNI-RO, SEONGDONG-GU, SEOUL, 04763, KOREA, REPUBLIC OF
Covered Property (1)
Three-Dimensional Flash Memory Using Ferroelectric Layer on Basis of Back Gate Structure
Application: 18/005,875 →
Publication: US 2023/0292523
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Aug 29, 2024
From: IUCF-HYU (INDUSTRY UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 068445/0319 →