Patent Assignment
Reel/Frame 068445/0319
Assignment of Assignor's Interest
Recorded: 2024-08-29
Pages: 5
Assignor
IUCF-HYU (INDUSTRY UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
Executed: 2024-08-28
Assignee
SAMSUNG ELECTRONICS CO., LTD.
129, SAMSUNG-RO, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, 16677, KOREA, REPUBLIC OF
Covered Properties
(2)
Three-Dimensional Flash Memory Using Ferroelectric Layer on Basis of Back Gate Structure
Three-Dimensional Flash Memory for Improving Integration and Operation Method Thereof
Related Assignments
(2)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Jan 18, 2023
From: SONG, YUN HEUB
To: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
Reel/Frame 062407/0177 →
Assignment of Assignor's Interest
Apr 20, 2023
From: SONG, YUN HEUB
To: IUCF-HYU (INDUSTRY UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
Reel/Frame 063393/0471 →