Patent Assignment
Reel/Frame 063158/0567
Assignment of Assignor's Interest
Recorded: 2023-03-30
Pages: 8
Assignors
LIAO, YU-CHENG
Executed: 2022-10-27
LIU, WENJIE
Executed: 2022-10-26
MOON, JOONSUK
Executed: 2022-10-26
Assignee
INNOTRON MEMORY CO., LTD.
NO. 388, XINGYE AVENUE, KONGGANG INDUSTRIAL PARK, HEFEI ECONOMIC AND TECHNOLOGICAL DEVELOPMENT ZONE, HEFEI, ANHUI, 230601, CHINA
Covered Property
(1)
Semiconductor Structure and Method for Forming the Same with Multiple Gate Conductive Layers Having Different Characteristics
Application:
18/162,818 →
Publication:
US 2024/0074143
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.