Change of Name

Recorded: 2023-08-18 Pages: 6

Assignor

INNOTRON MEMORY CO., LTD.

Executed: 2023-06-27

Assignee

CXMT CORPORATION

NO. 388 XINGYE AVENUE, ECONOMIC AND TECHNOLOGICAL DEVELOPMENT AREA, HEFEI CITY, ANHUI PROVINCE, 230601, CHINA

Covered Property (1)

Semiconductor Structure and Method for Forming the Same with Multiple Gate Conductive Layers Having Different Characteristics

Application: 18/162,818 →

Publication: US 2024/0074143

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.