Confirmatory License

Recorded: 2024-01-31 Pages: 2

Assignor

Executed: 2021-07-13

Assignee

U.S. DEPARTMENT OF ENERGY

1000 INDEPENDNCE AVE., SW, WASHINGTON, DISTRICT OF COLUMBIA, 20585

Covered Property (1)

GaN VERTICAL-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS WITH REGROWN p-GaN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD)

Patent: 11,495,694 →

Application: 17/372,810 →

Publication: US 2022/0013671

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.