Patent Assignment
Reel/Frame 066652/0915
Assignment of Assignor's Interest
Recorded: 2024-03-05
Pages: 3
Assignee
HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY CO., LTD
NO. 6 LIANHUI ST., XIXING ST., BINJIANG DISTRICT, HANGZHOU CITY, CHINA
Covered Property
(1)
Gate-Source Structure and Manufacturing Method Thereof, and Asymmetric Trench Mosfet and Manufacturing Method Thereof
Application:
18/390,943 →
Publication:
US 2024/0355925
Related Assignments
(1)
Other recorded transfers of the patent in this record — the chain of ownership.