Assignment of Assignor's Interest

Recorded: 2024-08-19 Pages: 12

Assignors

CHUNG, WONKEUN

Executed: 2024-08-15

KIM, BYOUNGHOON

Executed: 2024-08-15

LEE, JONGJIN

Executed: 2024-08-13

SEO, KANG-ILL

Executed: 2024-08-13

Assignee

SAMSUNG ELECTRONICS CO., LTD.

129, SAMSUNG-RO, YEONGTONG-GU, GYEONGGI-DO, SUWON-SI, 16677, KOREA, REPUBLIC OF

Covered Property (1)

Semiconductor Device Including Backside Contact Structure with Silicide Layer Formed in Feol Process

Patent: 12,389,660 →

Application: 18/808,758 →