Semiconductor device including backside contact structure with silicide layer formed in FEOL process
Provided is a semiconductor device including backside contact structure with a silicide layer formed in an FEOL process, and a method of manufacturing the same. The method includes: forming a channel structure on a substrate; forming a placeholder structure in the substrate; forming a silicide layer on the placeholder structure; forming a source/drain region on the silicide layer based on the channel structure; forming a gate structure on the channel structure; and forming a backside contact structure on a bottom surface of the placeholder structure.
1. A semiconductor device comprising:
a placeholder structure;
a first silicide layer above a top surface of the placeholder structure along a first direction perpendicular to the top surface and a bottom surface of the placeholder structure;
a first source/drain region above the first silicide layer along the first direction; and
a backside contact structure below the bottom surface of the placeholder structure along the first direction,
wherein the placeholder structure is between a bottom surface of the first silicide layer and a top surface of the backside contact structure along the first direction, and
wherein each of the placeholder structure and the backside contact structure comprises a metal or a metal compound.
2. The semiconductor device of claim 1 , wherein the placeholder structure comprises a first metal.
3. The semiconductor device of claim 2 , wherein the backside contact structure comprises a second metal different from the first metal.
4. The semiconductor device of claim 1 , wherein the first silicide layer comprises nickel silicide, cobalt silicide, or titanium silicide.
5. The semiconductor device of claim 1 , further comprising a barrier metal liner on a side surface of the backside contact structure,
wherein the barrier metal liner is not formed between a side surface of the placeholder structure and a backside isolation structure.
6. The semiconductor device of claim 1 , wherein an interface, a barrier or a connection surface is formed between the placeholder structure and the backside contact structure.
7. The semiconductor device of claim 1 , further comprising a backside isolation structure surrounding the backside contact structure and the placeholder structure.
8. The semiconductor device of claim 7 , further comprising:
a supplemental isolation structure in the backside isolation structure;
a second silicide layer on a top surface of the supplemental isolation structure; and
a second source/drain region on the second silicide layer.
9. The semiconductor device of claim 8 , wherein an interface, a barrier or a connection surface is formed between the supplemental isolation structure and the backside isolation structure.
10. The semiconductor device of claim 8 , wherein the backside isolation structure comprises a first insulating material, and
wherein the supplemental isolation structure comprises the first insulating material or a second insulating material.
11. A semiconductor device comprising:
a source/drain region;
a silicide layer below a bottom surface of the source/drain region along a first direction perpendicular to the bottom surface and a bottom surface of the silicide layer;
a supplemental isolation structure below the bottom surface of the silicide layer along the first direction; and
a backside isolation structure surrounding the supplemental isolation structure,
wherein the silicide layer is between the bottom surface of the source/drain region and a top surface of the supplemental isolation structure along the first direction.
12. The semiconductor device of claim 11 , further comprising a frontside contact structure on a top surface of the source/drain region.
13. The semiconductor device of claim 11 , wherein an interface, a barrier or a connection surface is formed between the supplemental isolation structure and the backside isolation structure.
14. The semiconductor device of claim 11 , wherein the backside isolation structure comprises a first insulating material, and the supplemental isolation structure comprises the first insulating material or a second insulating material.