Method of packaging thin die and semiconductor device including thin die
A semiconductor device has a carrier and a semiconductor die disposed over the carrier. A dummy die is disposed over the carrier as well. A first encapsulant is deposited over the semiconductor die and dummy die. The dummy die and a first portion of the first encapsulant is backgrinded while a second portion of the first encapsulant remains covering the semiconductor die. Backgrinding the dummy die fully removes the dummy die while the second portion of the first encapsulant remains covering the semiconductor die. A second encapsulant is optionally deposited over the dummy die prior to disposing the dummy die over the carrier. A conductive pillar is optionally formed over the dummy die prior to depositing the second encapsulant. The carrier is removed to expose an active surface of the semiconductor die. A build-up interconnect structure is formed over the active surface after removing the carrier.
1. A method of making a semiconductor device, comprising:
providing a carrier;
disposing a semiconductor die over the carrier;
disposing a dummy die over the carrier;
depositing a first encapsulant over the semiconductor die and dummy die; and
backgrinding the dummy die and a first portion of the first encapsulant while a second portion of the first encapsulant remains covering the semiconductor die.
2. The method of claim 1 , further including:
depositing a second encapsulant over the dummy die prior to disposing the dummy die over the carrier; and
backgrinding the dummy die to expose the second encapsulant.
3. The method of claim 2 , further including:
forming a conductive pillar over the dummy die prior to depositing the second encapsulant; and
backgrinding the dummy die to expose the second encapsulant and conductive pillar.
4. The method of claim 1 , further including:
removing the carrier to expose an active surface of the semiconductor die; and
forming a build-up interconnect structure over the active surface after removing the carrier.
5. The method of claim 4 , further including backgrinding the dummy die and the first portion of the first encapsulant after forming the build-up interconnect structure.
6. The method of claim 1 , wherein backgrinding the dummy die fully removes the dummy die while the second portion of the first encapsulant remains covering the semiconductor die.
7. A method of making a semiconductor device, comprising:
providing a semiconductor die;
disposing a dummy die adjacent to the semiconductor die;
depositing a first encapsulant over the semiconductor die and dummy die; and
backgrinding the dummy die and encapsulant while the encapsulant remains covering the semiconductor die.
8. The method of claim 7 , further including depositing a second encapsulant over the dummy die, wherein a height of the second encapsulant is greater than a height of the semiconductor die.
9. The method of claim 7 , further including forming an interconnect structure over the dummy die, wherein a height of the interconnect structure is greater than a height of the semiconductor die.
10. The method of claim 9 , further including disposing a semiconductor component over the semiconductor die and electrically connected to the semiconductor die through the interconnect structure.
11. The method of claim 7 , further including backgrinding to completely remove the dummy die while the encapsulant remains covering the semiconductor die.
12. The method of claim 7 , further including forming a build-up interconnect structure over the semiconductor die and first encapsulant prior to backgrinding the dummy die.
13. The method of claim 12 , further including disposing the semiconductor die and dummy die on a carrier prior to depositing the first encapsulant.