EMI shielding for flip chip package with exposed die backside
View Patent ↗A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.
1. A semiconductor device, comprising:
a substrate;
a semiconductor die disposed over the substrate;
an encapsulant deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant;
a stainless steel layer formed over the encapsulant semiconductor die, and a side surface of the substrate;
a copper layer formed over the stainless steel layer;
a solder layer formed over the copper layer; and
a heat spreader disposed over the solder layer.
2. The semiconductor device of claim 1 , further including an underfill disposed between the substrate and semiconductor die.
3. The semiconductor device of claim 1 , wherein a thickness of the stainless steel layer is between 0.1 and 0.3 micrometers.
4. The semiconductor device of claim 3 , wherein a thickness of the copper layer is between 5.4 and 6.6 micrometers.
5. The semiconductor device of claim 1 , wherein the solder layer comprises solder paste.
6. The semiconductor device of claim 1 , wherein the heat spreader is bonded to the semiconductor die through the solder layer.
7. A semiconductor device, comprising:
a semiconductor die;
a solder paste disposed over the semiconductor die;
a copper layer disposed between the solder paste and semiconductor die; a conductive protection layer formed over the copper layer
a stainless steel layer disposed between the copper layer and semiconductor die; and
a heat spreader disposed over the solder paste.
8. The semiconductor device of claim 7 , wherein a thickness of the copper layer is between 5.4 and 6.6 micrometers and a thickness of the stainless steel layer is between 0.1 and 0.3 micrometers.
9. The semiconductor device of claim 7 , further including an encapsulant deposited around the semiconductor die.
10. The semiconductor device of claim 7 , wherein the heat spreader is bonded to the semiconductor die by the solder paste.
11. A method of making a semiconductor device, comprising:
providing a semiconductor die;
depositing an encapsulant over the semiconductor die;
forming a stainless steel layer over the semiconductor die and encapsulant after depositing the encapsulant;
forming a copper layer over the stainless steel layer after forming the stainless steel layer, wherein the stainless steel layer is disposed between the copper layer and semiconductor die; forming a conductive protection layer over the copper layer;
forming a solder layer over the conductive protection layer after forming the conductive protection layer; and
attaching a heat spreader to the semiconductor die and encapsulant using the solder layer.
12. The method of claim 11 , further including disposing the semiconductor die over a substrate.
13. The method of claim 12 , further including disposing an underfill between the substrate and semiconductor die.
14. The method of claim 11 , further including forming the solder layer using a solder paste.
15. The method of claim 11 , wherein a thickness of the stainless steel layer is between 0.1 and 0.3 micrometers.
16. The method of claim 11 , wherein a thickness of the copper layer is between 5.4 and 6.6 micrometers.
17. A method of making a semiconductor device, comprising:
providing a substrate;
disposing a semiconductor die over the substrate;
depositing an encapsulant over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant;
forming a stainless steel layer over the encapsulant and semiconductor die
forming a copper layer over the stainless steel layer; forming a conductive protection layer over the copper layer;
forming a solder layer over the conductive protection layer; and
disposing a heat spreader over the solder layer.
18. The method of claim 17 , further including disposing an underfill between the substrate and semiconductor die.
19. The method of claim 17 , wherein a thickness of the stainless steel layer is between 0.1 and 0.3 micrometers.
20. The method of claim 19 , wherein a thickness of the copper layer is between 5.4 and 6.6 micrometers.
21. The method of claim 17 , further including forming the solder layer using a solder paste.
22. The method of claim 17 , further including bonding the heat spreader to the semiconductor die using the solder layer.
23. The method of claim 17 , further including forming the stainless steel layer by sputtering.
24. The method of claim 17 , further including forming the copper layer by sputtering.