Phase shift keying modulator
A phase shift keying modulator. The modulator comprises: a plurality of silicon waveguides provided in a device layer of a silicon-on-insulator platform, the silicon-on-insulator platform including one or more cavities; one or more III-V semiconductor based devices located within the one or more cavities of the silicon-on-insulator platform, each III-V semiconductor-based device including a III-V semiconductor based waveguide which is coupled at an input end to one of the plurality of silicon waveguides and coupled at an output end to another of the plurality of silicon waveguides, each III-V semiconductor based waveguide comprising an active phase modulating portion; and one or more contacts in electrical contact with each active phase modulating portion, such that the phase shift keying modulator is operable to modulate the phase of an optical wave passing through each active phase modulating portion.
1. A phase shift keying modulator, comprising:
a plurality of silicon waveguides provided in a device layer of a silicon-on-insulator platform, the silicon-on-insulator platform including one or more cavities;
one or more III-V semiconductor-based devices located within the one or more cavities of the silicon-on-insulator platform, each III-V semiconductor-based device including a III-V semiconductor-based waveguide which is coupled at an input end to one of the plurality of silicon waveguides and coupled at an output end to another of the plurality of silicon waveguides, each III-V semiconductor-based waveguide comprising an active phase modulating portion; and
one or more contacts in electrical contact with each active phase modulating portion, such that the phase shift keying modulator is operable to modulate the phase of an optical wave passing through each active phase modulating portion,
wherein the silicon-on-insulator platform comprises a first substrate layer and a first insulator layer, the first insulator layer being between the device layer and the first substrate layer, and
wherein at least one of the one or more cavities extends entirely through the device layer and only partially through the first insulator layer.
2. The phase shift keying modulator of claim 1 , wherein the one or more III-V semiconductor-based devices are provided on one or more device coupons, which are bonded to a bed of the respective cavity.
3. The phase shift keying modulator of claim 2 , wherein each device coupon is transfer printed into a respective cavity of the silicon-on-insulator platform.
4. The phase shift keying modulator of claim 2 , wherein the one or more device coupons each comprise only one III-V semiconductor-based waveguide, the III-V semiconductor-based waveguide comprising a single optical path.
5. The phase shift keying modulator of claim 2 , wherein the one or more device coupons each comprise only one III-V semiconductor-based MZM.
6. The phase shift keying modulator of claim 2 , wherein the one or more device coupons each comprise two III-V semiconductor-based MZMs.
7. The phase shift keying modulator of claim 1 , wherein the phase shift keying modulator includes a binary phase shift keying modulator component, the binary phase shift keying modulator component comprising:
a beam splitter, the beam splitter splitting an input optical path into two modulation optical paths; and,
a beam combiner, the beam combiner combining the two modulation optical paths into an output optical path,
wherein the input optical path passes through an input silicon waveguide, each of the two modulation optical paths pass through respective active phase modulating portions, and the output optical path passes through an output silicon waveguide.
8. The phase shift keying modulator of claim 7 , wherein the phase shift keying modulator includes a quadrature phase shift keying modulator component, the quadrature phase shift keying modulator component comprising:
two binary phase shift keying modulator components;
a parent beam splitter, the parent beam splitter splitting an input optical path into two binary modulator optical paths; and,
a parent beam combiner, the parent beam combiner combining the two binary modulator optical paths into an output optical path,
wherein the input optical path passes through an input silicon waveguide, each of the binary modulator optical paths pass through a respective binary phase shift keying modulator component, and the output optical path passes through an output silicon waveguide.
9. The phase shift keying modulator of claim 8 , wherein the phase shift keying modulator includes a dual polarization quadrature phase shift keying modulator component, the dual polarization quadrature phase shift keying modulator component comprising:
two quadrature phase shift keying modulator components;
a polarization beam splitter, the polarization beam splitter splitting an input optical path into two quadrature modulator optical paths; and,
a polarization beam combiner, the polarization beam combiner combining the two quadrature modulator optical paths into an output optical path,
wherein the input optical path passes through an input silicon waveguide, each of the two quadrature modulator optical paths have respectively different polarization states and pass through a respective quadrature phase shift keying modulator component, and the output optical path passes through an output silicon waveguide.
10. The phase shift keying modulator of claim 1 , wherein there is an insulation trench between at least one of the one or more III-V semiconductor-based devices and a substrate layer of the silicon-on-insulator platform.
11. The phase shift keying modulator of claim 10 , wherein the insulation trench is formed by or filled with air.
12. The phase shift keying modulator of claim 1 , wherein the silicon-on-insulator platform further comprises a second insulator layer and a second substrate layer, the second insulator layer being between the first substrate layer and the second substrate layer so as to form a double silicon on insulator platform.
13. The phase shift keying modulator of claim 1 , wherein the length of each of the active phase modulating portions is at least 300 μm and no more than 3000 μm.
14. A method of manufacturing the phase shift keying modulator of claim 1 , the method comprising:
providing the silicon-on-insulator platform;
providing one or more device coupons, the device coupons comprising the one or more III-V semiconductor-based devices;
depositing each device coupon into a respective cavity of the silicon-on-insulator platform; and
electrically connecting the one or more contacts with each active phase modulating portion.
15. A phase shift keying modulator, comprising:
a plurality of silicon waveguides provided in a device layer of a silicon-on-insulator platform, the silicon-on-insulator platform including one or more cavities;
one or more III-V semiconductor-based devices located within the one or more cavities of the silicon-on-insulator platform, each IlI-V semiconductor-based device including a III-V semiconductor-based waveguide which is coupled at an input end to one of the plurality of silicon waveguides and coupled at an output end to another of the plurality of silicon waveguides, each III-V semiconductor-based waveguide comprising an active phase modulating portion; and
one or more contacts in electrical contact with each active phase modulating portion, such that the phase shift keying modulator is operable to modulate the phase of an optical wave passing through each active phase modulating portion,
wherein the phase shift keying modulator includes a binary phase shift keying modulator component, the binary phase shift keying modulator component comprising:
a beam splitter, the beam splitter splitting an input optical path into two modulation optical paths; and
a beam combiner, the beam combiner combining the two modulation optical paths into an output optical path,
wherein the input optical path passes through an input silicon waveguide, each of the two modulation optical paths pass through respective active phase modulating portions, and the output optical path passes through an output silicon waveguide, and
wherein the beam combiner is a 2×2 beam combiner and wherein one of the two output waveguides of the beam combiner is connected to a monitor for monitoring a DC bias.
16. The phase shift keying modulator of claim 15 , wherein:
the silicon-on-insulator platform comprises a substrate layer and an insulator layer, the insulator layer being between the device layer and the substrate layer, and
at least one of the one or more cavities extends entirely through the device layer and only partially through the insulator layer.
17. A phase shift keying modulator, comprising:
a plurality of silicon waveguides provided in a device layer of a silicon-on-insulator platform, the silicon-on-insulator platform including one or more cavities;
one or more III-V semiconductor-based devices located within the one or more cavities of the silicon-on-insulator platform, each III-V semiconductor-based device including a III-V semiconductor-based waveguide which is coupled at an input end to one of the plurality of silicon waveguides and coupled at an output end to another of the plurality of silicon waveguides, each III-V semiconductor-based waveguide comprising an active phase modulating portion; and
one or more contacts in electrical contact with each active phase modulating portion, such that the phase shift keying modulator is operable to modulate the phase of an optical wave passing through each active phase modulating portion,
wherein the one or more III-V semiconductor-based devices are provided on one or more device coupons, which are bonded to a bed of the respective cavity, and
wherein the one or more device coupons each comprise two III-V semiconductor-based waveguides, each III-V semiconductor-based waveguide comprising a single optical path.