Biosensor and sensing cell array using the same
View Patent ↗A biosensor and a sensing cell array using a biosensor are disclosed. Adjacent materials containing a plurality of different ingredients are analyzed to determine the ingredients based on their magnetic susceptibility or dielectric constant. A sensing cell array includes such as a magnetization pair detection sensor including a MTJ (Magnetic Tunnel Junction) or GMR (Giant Magnetoresistive) device, a magnetoresistive sensor including a MTJ device and a magnetic material (current line), a dielectric constant sensor including a sensing capacitor and a switching device, a magnetization hole detection sensor including a MTJ or GMR device, a current line, a free ferromagnetic layer and a switching device, and a giant magnetoresistive sensor including a GMR device, a switching device and a magnetic material (or forcing wordline). Ingredients of adjacent materials are separated based on electrical characteristics of ingredients by sensing magnetic susceptibility and dielectric constant depending on the sizes of the ingredients.
1. A biosensor, comprising:
a MTJ (Magnetic Tunnel Junction) device comprising a free ferromagnetic layer, a tunnel junction layer and a fixed ferromagnetic layer;
a switching device, formed under the fixed ferromagnetic layer of the MTJ device, for outputting current sensed in the MTJ device into a sense bitline; and
a sense wordline, formed on the free ferromagnetic layer, for applying different bias voltages to the MTJ device,
wherein when a magnetic field of the fixed ferromagnetic layer is transmitted into the free ferromagnetic layer, the current outputted from the switching device varies according to a magnetic flux density depending on adjacent materials.
2. The biosensor according to claim 1 , further comprising a barrier conductive layer under the fixed ferromagnetic layer of the MTJ device.
3. The biosensor according to claim 2 , wherein the switching device comprises:
a drain connected to the sense bitline;
a source connected to the barrier conductive layer; and
a gate connected to a wordline.
4. The biosensor according to claim 1 , further comprising an oxide protective layer, formed on the MTJ device, the switching device and the sense wordline.
5. A biosensor comprising:
a MTJ device comprising a free ferromagnetic layer to receive a sense wordline voltage, a tunnel junction layer and a fixed ferromagnetic layer;
a ferromagnetic material, formed on the free ferromagnetic layer, for forming a magnetic field depending on magnetic coupling with the free ferromagnetic layer; and
a switching device, formed under the fixed ferromagnetic layer of the MTJ device, for outputting current sensed in the MTJ device into a sense bitline,
wherein the current outputted from the switching device varies according to magnetoresistive values depending on adjacent materials.
6. The biosensor according to claim 5 , further comprising a barrier conductive layer formed under the fixed ferromagnetic layer of the MTJ device.
7. The biosensor according to claim 6 , wherein the switching device comprises:
a drain connected to the sense bitline;
a source connected to the barrier conductive layer; and
a gate connected to a wordline.
8. The biosensor according to claim 5 , further comprising an oxide protective layer formed on the MTJ device, the switching device and the magnetic material.
9. The biosensor according to claim 5 , further comprising an insulating material, formed between the MTJ device and the magnetic material.
10. A biosensor comprising:
a MTJ device comprising a free ferromagnetic layer to receive a sense wordline voltage, a tunnel junction layer and a fixed ferromagnetic layer;
a current line, formed on the free ferromagnetic layer, for receiving a forcing wordline voltage and forming a magnetic field depending on magnetic coupling with the free ferromagnetic layer; and
a switching device, formed under the fixed ferromagnetic layer of the MTJ device, outputting current sensed in the MTJ device into a sense bitline,
wherein the current outputted from the switching device varies according to magnetoresistive values depending on adjacent materials.
11. The biosensor according to claim 10 , further comprising a barrier conductive layer formed under the fixed ferromagnetic layer of the MTJ cell.
12. The biosensor according to claim 11 , wherein the switching device comprises:
a drain connected to the sense bitline;
a source connected to the barrier conductive layer; and
a gate connected to a wordline.
13. The biosensor according to claim 10 , further comprising an oxide protective layer, formed on the MTJ device, the switching device and the current line.
14. The biosensor according to claim 10 , further comprising an insulating material, formed between the MTJ device and the current line.