P-channel power chip
View Patent ↗An integrated circuit device for delivering power to a load includes a P-MOS power transistor, an N-MOS bypass transistor and a gate driver circuit. The P-MOS power transistor is coupled between a supply voltage node and a power output node of the integrated circuit device, and the N-MOS bypass transistor is coupled between the power output node and a reference node of the integrated circuit device. The gate driver circuit responds to a pulse-width-modulated (PWM) control signal by outputting an active-low drive-enable signal to a gate terminal of the P-MOS power transistor and an active-high bypass-enable signal to a gate terminal of the N-MOS bypass transistor during respective, non-overlapping intervals.
1. An integrated circuit device for delivering power to a load, the integrated circuit device comprising:
a P-type metal oxide semiconductor (P-MOS) power transistor coupled between a supply voltage node and a power output node of the integrated circuit device;
an N-type metal oxide semiconductor (N-MOS) bypass transistor coupled between the power output node and a reference node of the integrated circuit device; and
a gate driver circuit to receive a pulse-width-modulated (PWM) control signal and to output, in response to the PWM control signal, an active-low drive-enable signal to a gate terminal of the P-MOS power transistor and an active-high bypass-enable signal to a gate terminal of the N-MOS bypass transistor during respective, non-overlapping intervals.
2. The integrated circuit device of claim 1 wherein the P-MOS power transistor comprises a negatively-doped well disposed within a semiconductor substrate of the integrated circuit device, and the N-MOS bypass transistor comprises a negatively-doped drain node that is separated from the negatively-doped well by at least fifty (50) microns (μm).
3. The integrated circuit device of claim 1 wherein the P-MOS power transistor comprises a negatively-doped well disposed within a semiconductor substrate of the integrated circuit device and wherein the integrated circuit device further comprises a guard ring coupled to the reference node and disposed between the negatively-doped well and the semiconductor substrate to reduce resistance between a negatively-doped terminal, disposed within the negatively-doped well, and the ground reference node.
4. The integrated circuit device of claim 1 wherein the gate driver circuit includes control circuitry to lower the drive-enable signal for an interval indicated by the width of a pulse within the PWM control signal, and then to raise the drive-enable signal prior to outputting the active-high bypass-enable signal.
5. The integrated circuit device of claim 1 wherein the gate driver circuit includes control circuitry to lower the drive-enable signal in response to a leading edge of a pulse within the PWM control signal, maintain the drive-enable signal in a logic low state for the duration of the pulse, and raise the drive-enable signal at a trailing edge of the pulse.
6. The integrated circuit device of claim 5 wherein the leading edge of the pulse is a rising edge, and the trailing edge of the pulse is a falling edge.
7. The integrated circuit device of claim 1 wherein the gate driver circuitry comprises control circuitry to raise the active-high bypass-enable signal for a predetermined interval following detection of a pulse in the PWM control signal.
8. The integrated circuit device of claim 1 wherein the gate driver circuitry comprises control circuitry to raise the active-high bypass-enable signal for a predetermined interval following the trailing edge of a pulse in the PWM control signal.
9. The integrated circuit device of claim 1 wherein the gate driver circuitry comprises control circuitry to raise the active-high bypass-enable signal for a duration determined, at least in part, by the PWM control signal.
10. A method of operation within an integrated circuit device, the method comprising:
receiving a pulse-width-modulated (PWM) control signal; and
switching a P-type metal oxide semiconductor (P-MOS) power transistor to a conductive state for the duration of a pulse within the PWM control signal to switchably couple a power supply node to an output of the integrated circuit device.
11. The method of claim 10 further comprising:
switching the P-MOS power transistor to a substantially non-conductive state at the conclusion of the pulse within the PWM control signal; and
switching an N-type metal oxide semiconductor (N-MOS) bypass transistor to a conductive state after switching the P-MOS power transistor to the substantially non-conductive state.
12. The method of claim 11 wherein switching the N-MOS bypass transistor to the conductive state after switching the P-MOS power transistor to the substantially non-conductive state comprises delaying for a dead time interval after raising a drive-enable signal that is supplied to a gate of the P-MOS power transistor and prior to raising a bypass signal that is supplied to a gate terminal of the N-MOS bypass transistor.
13. The method of claim 10 wherein switching the P-MOS power transistor to a conductive state for the duration of a pulse within the PWM control signal comprises lowering a drive-enable signal in response to a leading edge of the pulse within the PWM control signal, and then raising the drive-enable signal in response to a trailing edge of the pulse within the PWM control signal, the drive-enable signal being supplied to a gate terminal of the P-MOS power transistor.
14. An integrated circuit device for delivering power to a load, the integrated circuit device comprising:
means for receiving a pulse-width-modulated (PWM) control signal; and
means for switching a P-type metal oxide semiconductor (P-MOS) power transistor to a conductive state for the duration of a pulse within the PWM control signal to switchably couple a power supply node to an output of the integrated circuit device.
15. The integrated circuit device of claim 14 further comprising:
means for switching the P-MOS power transistor to a substantially non-conductive state at the conclusion of the pulse within the PWM control signal; and
means for switching an N-type metal oxide semiconductor (N-MOS) bypass transistor to a conductive state after switching the P-MOS power transistor to the substantially non-conductive state.
16. The method of claim 14 wherein the means for switching the P-MOS power transistor to a conductive state for the duration of a pulse within the PWM control signal comprises means for lowering a drive-enable signal in response to a leading edge of the pulse within the PWM control signal, and then raising the drive-enable signal in response to a trailing edge of the pulse within the PWM control signal, the drive-enable signal being supplied to a gate terminal of the P-MOS power transistor.
17. Computer-readable media having information embodied therein that includes a description of an integrated circuit device for delivering power to a load, the information including descriptions of:
a P-type metal oxide semiconductor (P-MOS) power transistor coupled between a supply voltage node and a power output node of the integrated circuit device;
an N-type metal oxide semiconductor (N-MOS) bypass transistor coupled between the power output node and a reference node of the integrated circuit device; and
a gate driver circuit to receive a pulse-width-modulated (PWM) control signal and to output, in response to the PWM control signal, an active-low drive-enable signal to a gate terminal of the P-MOS power transistor and an active-high bypass-enable signal to a gate terminal of the N-MOS bypass transistor during respective, non-overlapping intervals.